弛豫锗硅减压化学气相淀积的CFD模型及仿真

doi:10.3969/j.issn.1001-2400.2012.05.031

Abstract

Abstract:

Based on the CVD growth principle of SiGe materials,CFD (Computational Fluid Dynamics) simulation model about kinetics of relaxation SiGe and the corresponding fluid model are built,for the reduced pressure chemical vapor deposition (RPCVD) system. We simulate and analyze the effects of flow, pressure, and rotation speed on the gas density field and the velocity field in the reaction chamber, by using CFD simulation software named Fluent. According to simulation results, when flow is 50L/min, pressure is 2666.44Paand rotation speed is 35r/min, the uniformity of the flow field above the substrate is the best. We carry out the relaxation SiGe RPCVD experiment under optimized process conditions, and experimental results of SiGe film thickness distribution is consistent with the simulation result about the Fluent concentration distribution of the relaxation SiGe precursor SiH₂Cl₂, which proves the correctness of our model.

Key words: relaxation Silicon-Germanium, reduced pressure chemical vapor deposition, computational fluid dynamics model, density distribution

DAI Xianying;ZHENG Ruochuan;GUO Jingjing;ZHANG Heming;HAO Yue;SHAO Chenfeng;JI Y. CFD modeling of relaxation SiGe RPCVD[J].J4, 2012, 39(5): 186-191.

References

［1］ Lee M L, Fitzgerald E A, Bulsara M T, et al. Strained Si, SiGe, and Ge Channels for High-mobility Metal-oxide-semiconductor Field-effect Transistors［J］. Appl Phys, 2005, 97(1): 1-27.
［2］ Huang L J, Chu J O, Cananei D F, et al. SiGe-on-insulator Prepared by Wafer Bonding and Layer Transfer for High-performance Field-effect Transistors ［J］. Applied Physics Letter, 2009, 78(9): 1267-1269.
［3］ Hock G, Kohn E, Rosenblad C, et al. High Hole Mobility in SiGe Channel Meta-oxide Semiconductor Field-effect Transistors Grown by Plasma-enhanced Chemical Vapor Deposition［J］. Applied Physics Letter, 2000, 76(26): 3920-3922.
［4］ Sutton A K, Haugerud B M, Yuan Lu, et al. Proton Tolerance of Fourth-generation 350 GHz UHVCVD SiGe HBTs. ［J］. IEEE Trans on Nuclear Science, 2004, 51(6): 3736-3742.
［5］ Hartmann J M, Burdin M, Rolland G, et al.Growth Kinetics of Si and SiGe on Si(1 0 0),Si(1 1 0) and Si(1 1 1) Surfaces ［J］. Crystal Growth, 2006, 294: 288-295.
［6］ Song Y J, Lim J W, Kang J Y, et al. High Transconductance Modulation-doped SiGe pMOSFETs by RPCVD ［J］. Electronics Letters, 2002, 38(23): 1479-1480.
［7］戴显英, 金国强, 董洁琼, 等. 锗硅/硅异质结材料的化学气相淀积生长动力学模型［J］. 物理学报, 2011, 60(6): 065101-1-065101-7.
Dai Xianying, Jin Guoqiang, Dong Jieqiong ,et al. A Kinetics Model for the Chemical Vapor Deposition Growth of SiGe/Si Heterojunction Materials ［J］. Acta Phys Sin, 2011, 60(6): 065101-1-065101-7.
［8］金晓军, 梁骏吾. GeSi CVD系统的流体力学和表面反应动力学模型［J］. 电子学报, 1996, 24(5): 7-12.
Jin Xiaojun, Liang Junwu.A Kinetics and Transport Model of GexSi1-x Chemical Vapor Epitaxy ［J］. Acta Electronica Sinica, 1996, 24(5): 7-12.
［9］王福军. 计算流体动力学分析——CFD软件原理与应用［M］. 北京: 清华大学出版社, 2004.
［10］徐谦, 左然, 张红. 反向流动垂直喷淋式MOCVD反应器设计与数值模拟［J］. 人工晶体学报, 2005, 34(6):1059-1064.
Xu Qian, Zuo Ran, Zhang Hong. Design and Simulation of Reverse-flow Showerhead MOCVD Reactors ［J］. Journal of Synthetic Crystals,2005, 34(6): 1059-1064.
［11］李志明, 郝跃, 张进成, 等. 氮化物MOCVD反应室流场的仿真与分析［J］. 人工晶体学报, 2010, 39(1): 226-232.
Li Zhiming, Hao Yue, Zhang Jincheng, et al. Simulation and Analysis of Flow Field in Nitride MOCVD Reactor Chamber ［J］. Journal of Synthetic Crystals, 2010, 39(1): 226-232.
［12］钟树泉, 任晓敏, 王琦, 等. MOCVD反应器热流场的数值模拟研究［J］. 人工晶体学报, 2008, 37(6): 1342-1348.
Zhong Shuquan, Ren Xiaomin, Wang Qi, et al. Numerical Simulation of Flow and Temperature Field in MOCVD Reactor ［J］. Journal of Synthetic Crystals, 2008, 37(6): 1342-1348.
［13］ Singer P H. Techniques of Low Pressure Chemical Vapor Deposition ［J］. Semiconductor International, 1984, 7(5): 72-77.
［14］关旭东. 硅集成电路工艺基础［M］. 北京: 北京大学出版社, 2001.
［15］ Yao Zhaohui, Yoder G L, Culbertson C T, et al. Numerical Simulation of Dispersion Generated by a 180° Turn in a Microchannel ［J］. Chinese Physics B, 2002, 11(3): 226-232.
［16］ Mohapatra D R, Rai P, Misra A, et al. Parameter Window of Diamond Growth on GaN Films by Microwave Plasma Chemical Vapor Deposition ［J］. Diamond and Related Materials, 2008, 17(7): 1775-1779.

CFD modeling of relaxation SiGe RPCVD

PDF (PC)

Like

Knowledge

Cited

Abstract

Cite this article

share this article

References

Related Articles 1

Metrics

Comments

Recommended 0