深刻蚀方法对硅基SIWF通孔显微结构的影响

doi:10.3969/j.issn.1001-2400.2015.04.007

Abstract

Abstract:

The microstructure and the array accuracy of the etched vias of the silicon-basedsubstrate integrated waveguide filter (SIWF) are crucial to the electromagnetic performance and the reliability of the silicon-based SIWF. In this paper, three different etching methods, including potassiumhydroxide etching, picosecond UV laser etching, and inductively coupled plasma (ICP) etching are utilized to etch via arrays onhigh resistivity ［100］-siliconsubstrates. The profiles and the array accuracy of the vias are measured by optical critical dimension and the micromorphology of the vias is characterized byscanning electron microscopy (SEM), on the basis of which the effects of different deep etching methods on the microstructure of the viasidewall of the silicon-based SIWF are studied. The results indicate that the microstructure of the vias etched by the inductively coupled plasma etching method is the best. Meanwhile, this kind of vias has the highest array accuracy and the lowest roughness. So, under the current condition of process equipment and technical level, ICP etching is the optimal method for manufacturing deep via arrays of the silicon-based SIWF.

Key words: substrate integrated waveguide, via, deep etching, microstructure

CLC Number:

TN405.98

DU Lin;PU Shi;SHI Yonggui;ZHANG Jincheng;HAO Yue. Effects of deep etching methods on the microstructure of the etched vias of the silicon-based SIWF[J].J4, 2015, 42(4): 41-46.

References

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Effects of deep etching methods on the microstructure of the etched vias of the silicon-based SIWF

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