机械致单轴应变SOI晶圆的制备

doi:10.3969/j.issn.1001-2400.2012.03.034

Abstract

Abstract:

Based on the theory of elasticity and the mechanical properties of SOI, this paper puts forward a new method to produce the uniaxially strained SOI wafer, and describes the principle of the process. The 4-in. Silicon-On-Insulater wafer under goes the mechanical-bended test on the pedestal whose curvature radius is 0.75m, and then it is annealed at 250℃ for 20 hours to achieve the uniaxial strain. The IR-transmission-unaffected-diffraction instrument and Raman spectrum instrument are used for study of the pre-bonding quality and strain degree. The frequency shift of the Raman spectrum is 520.3cm^{-1^{．The Si peak of the strained Si layer is shifted by -0.3cm^{-1^{compared to the typical value. It is indicated that a compressive uniaxial strain can be obtained after bending and annealing. The comparative strain is 0.077%, higher than the value of 0.059% in the literature.}}}}

Key words: SOI, uniaxial strain, mechanically bending, elastic-plastic mechanics

CLC Number:

TN304

DAI Xianying;WANG Lin;YANG Cheng;ZHENG Ruochuan;ZHANG Heming;HAO Yue. Fabrication of the uniaxial stained SOI wafer by mechanical bending[J].J4, 2012, 39(3): 209-212.

References

［1］宋建军, 张鹤鸣, 戴显英, 等. 第一性原理研究应变Si/(111)Si_(1-x)Ge_x能带结构［J］. 物理学报, 2008, 579(9): 5918-5922.
Song Jianjun, Zhang Heming, Dai Xianying, et al. Band Structure of Strained Si/(111)Si_(1-x)Ge_x: a First Principles Investigation［J］. Acta Physica Sinica, 2008, 579(9): 5918-5922.
［2］冯倩, 郝跃. 新型绝缘体上硅技术的发展与展望［J］. 西安电子科技大学学报, 2001, 28(6): 1-5.
Feng Qian, Hao Yue. Development of SOI Technology on the New Insulator［J］. Journal of Xidian University, 2001, 28(6): 1-5.
［3］林成鲁, 张苗. SOI——二十一世纪的微电子技术［J］. 功能材料与器件学报, 1999, 5(1): 2-3.
Lin Chenglu, Zhang Miao. SOI—the Microelectronics Technology in the 21st Century［J］. Journal of Functional Materials and Devives, 1999, 5(1): 2-3.
［4］ Celler G K, Cristoloveanu S. Frontiers of Silicon-on-insulator［J］. Appl Phys, 2003, 93(9): 4955-4978.
［5］ Kim K, Chuang C T, Rim K. Performance Assessment of Scaled Strained-Si Channel-on-insulator (SSOI) CMOS［J］. Solid-State Electronics, 2004, 48(2): 239-243.
［6］ Haugerud B M, Bosworth L A, Belford R E. Mechanically Induced Strain Enhancement of Metal Oxide Semiconductor Field Effect Transistors［J］ . Applied Physics Letters, 2003, 94(6): 4102-4107.
［7］ Himcinschi C, Radu I, Muster F. Uniaxially Strained Silicon by Wafer Bonding and Layer Transfer［J］. Solid-state Electronics, 2007, 51(2): 226-230.
［8］李同林. 弹塑性力学［M］. 武汉:中国地质大学出版社, 2006: 43-96.
［9］张新占. 材料力学［M］. 2版. 西安: 西北工业大学出版社, 2006: 4-6.
［10］秦世伦. 材料力学［M］. 成都: 四川大学出版社, 2008: 51-53.
［11］李碧波, 黄福敏. 用显微拉曼扫描成像法测集成电路中CoSi₂电极引起的应力［J］. 半导体学报, 1998, 19(4): 299-303.
Li Bibo, Huang Fumin. Stress Induced by CoSi₂ Grown on Polycrystalline Si Measured by Micro-Raman Spectroscopy［J］. Chinese Journal of Semiconductors, 1998, 19(4): 299-303.
［12］ De Wolf I. Stress Induced by CoSi₂ Grown on Polycrystalline Si Measured by Micro Raman Spectroscopy［J］. J Raman Spectros, 1999(30): 877-883.
［13］ Himcinschi C, Reiche M, Scholz R, et al. Compressive Uniaxially Strained Silicon on Insulator by Prestrained Wafer Bonding and Layer Transfer［J］. Applied Physics Letters, 2007, 90(23): 1-3.

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Fabrication of the uniaxial stained SOI wafer by mechanical bending

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