Journal of Xidian University ›› 2022, Vol. 49 ›› Issue (6): 51-57.doi: 10.19665/j.issn1001-2400.2022.06.007
• Information and Communications Engineering • Previous Articles Next Articles
GUO Fei(),LIANG Yu(),ZHANG Wei(),YANG Xue()
Received:
2021-10-11
Online:
2022-12-20
Published:
2023-02-09
CLC Number:
GUO Fei,LIANG Yu,ZHANG Wei,YANG Xue. Design of a SiGe BiCMOS broadband low noise amplifier[J].Journal of Xidian University, 2022, 49(6): 51-57.
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参数 | 文献[ | 文献[ | 文献[ | 文献[ | 文中* |
---|---|---|---|---|---|
工艺 | 0.13 μm SiGe | 0.13 μm SiGe | 0.13 μm SiGe | 0.13 μm SiGe | 0.13 μm SiGe |
带宽/GHz | 8~20 | 2~20 | 6~18 | 3~26 | 6~30 |
增益/dB | 8.0~19.0 | 17.6~18.0 | 15.7~16.3 | 9.5~10.6 | 16.5~19.1 |
带内增益起伏/dB | 11.0 | 0.4 | 1.6 | 1.1 | 2.6 |
RNF/dB | 1.30~3.00 | 2.60~2.90 | 2.70~3.80 | 4.30~4.90 | 1.46~2.66 |
回波损耗/dB | S11<-10.0 S22<-10.0 | S11<-10.0 S22<-10.0 | S11<-16.4 S22<-14.9 | S11<-15.0 S22<-9.0 | S11<-11.9.0 S22<-13.7 |
IP1dB/dBm | -7.5 | -14.2 | -4.8 | -5.6 | -25.6 |
功耗/mW | 49.0 | 55.0 | 32.0 | 33.0 | 38.7 |
面积/mm2 | 0.690 | 0.515 | 1.288 | 0.480 | 0.880 |
3.01 | 3.32 | 1.84 | 1.94 | 10.03 |
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