Abstract:

GaN-based microwave devices possess potential in microwave and high power applications, and related researches have been a hotspot in the current compound semiconductor area. A comparison and discussion of GaN's show its great advantages in microwave and high power application. The newest development of several GaN-based microwave devices is also introduced. The advantage of GaN Modulation Doped Field Effect Transistors(MODFETs) in microwave and high power applications is compared with that of other microwave devices finally.

Key words: GaN, microwave and high power, modulation doped field effect transistors