›› 2013, Vol. 26 ›› Issue (10): 98-.

• 论文 • 上一篇    下一篇

改善高压FRD结终端电流丝化的新结构

吴立成,吴郁,魏峰,贾云鹏,胡冬青,金锐,査祎影   

  1. (1.北京工业大学 电子信息与控制工程学院,北京 100124;2.国网智能院 电工新材料及微电子研究所,北京 100192)
  • 出版日期:2013-10-15 发布日期:2013-10-23
  • 作者简介:吴立成(1986—),男,硕士。研究方向:功率半导体器件与功率集成电路。E-mail:wulicheng@emails.bjut.edu.cn。吴郁(1970—),男,副研究员。研究方向:功率半导体器件与功率集成电路。
  • 基金资助:

    国家自然科学资金资助项目(61176071);国家电网公司科技基金资助项目(SGRI-WD-71-13-006);教育部博士点基金新教师基金资助项目(2011110312001)

New Structure to Alleviate Current Filamentation at the Edge Termination of High-Voltage FRDs during Dynamic Avalanche

WU Licheng,WU Yu,WEI Feng,JIA Yunpeng,HU Dongqing,JIN Rui,ZHA Yiying   

  1. (1.School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China;]2.Electrical Engineering New Materials and Microelectronics Institute,State Grid Intelligence Academy,Beijing 100192,China)
  • Online:2013-10-15 Published:2013-10-23

摘要:

动态雪崩问题是影响高压硅功率二极管如高压快恢复二极管(FRD)坚固性的一个主要因素。文中通过仿真计算,比较了高压FRD两种不同终端结构的动态雪崩特性。结果表明,横向变掺杂2(VLD)终端结构的动态雪崩耐量比结终端延伸(JTE)结构更优。为改善后者动态雪崩过程中结终端处的电流丝化问题,文中提出改用P+/P阳极结构中的P型缓冲层做介于有源区与终端区之间的电阻区。仿真结果表明,相应的电流丝化问题可得到显著缓解。

关键词: 快恢复二极管, 动态雪崩, 电流丝, 终端结构

Abstract:

Dynamic avalanche is a major factor which affects the ruggedness of high-voltage silicon power bipolar devices,e.g.the high-voltage fast recovery diode (FRD).In this paper,a simulation to compare the dynamic avalanche characteristics of two high-voltage FRDs with different edge terminations is presented.Simulation results show that a high-voltage FRD with VLD (variation of lateral doping) structure has better dynamic avalanche immunity than that with JTE (junction termination extension).A new structure for the FRD with JTE to alleviate the current filament at the edge termination during dynamic avalanche is proposed and its effectiveness is simulated and demonstrated.In this structure the resistance area is created by the P buffer area of the P+/P anode.Simulation results show that the current filament can be well alleviated.

Key words: FRD;dynamic avalanche;current filament;terminations

中图分类号: 

  • TN312+.4