关键词: InGaN, 太阳能电池, p电极, 指叉间距

Abstract:

In this study,InGaN/GaN multiple quantum well (MQW) structures photovoltaic cells are grown by metal-organic chemical vapor deposition (MOCVD) on the sapphire substrate.Mesh grid p-electrode of two different kinds of shapes with varying mesh grid spacing are fabricated as well.It is found that as mesh grid spacing decrease,the area of the electrode increases and the absorption area decreases,causing degradation in the photovoltaic cells.It is also observed that cells whose p-electrode gird deposited at the edges of the chips achieve preferred performance due to the existence of stronger electric fields at the MESA edges.

Key words: InGaN;photovoltaic;p-electrode;grid spacing