氮化镓固态功率放大器发展概述

doi:10.16180/j.cnki.issn1007-7820.2023.08.010

摘要/Abstract

摘要：

应用半导体技术的固态功率放大器具有体积小和稳定性高等优点,在很多微波应用中取代了传统的真空器件行波管。在所有类型半导体材料中,第三代半导体材料GaN(Gallium Nitride)因为具有宽禁带、高电子迁移率和高击穿电压等优势,被广泛应用于功率放大器。基于功率放大器的发展,文中阐述了固态功率放大器的发展历史,总结了GaN技术与其他半导体技术性能的比较,并着重介绍了应用GaN HEMT(GaN High Electron Mobility Transistor)技术的功率放大器。讨论了GaN HEMT功率放大器的各种类型,包括A类、B类、C类、D类和E类等,介绍了应用于GaN功率放大器的效率和线性度提高技术,包括Doherty功率放大器和包络跟踪技术,以及数字预失真技术等,并就相关技术做了总结和对比。

关键词: 氮化镓, 固态功率放大器, 氮化镓功率放大器, 氮化镓高电子迁移率晶体管, 半导体技术, Doherty功率放大器, 包络跟踪, 数字预失真

Abstract:

Solid-state power amplifiers using semiconductor technology have the advantages of small size and high stability, and have replaced traditional travelling wave tube amplifiers in many microwave applications. Among all types of semiconductor materials, the third-generation semiconductor material GaN(Gallium Nitride) has been widely used in power amplifiers because of its advantages of wide band gap, high electron mobility, and high breakdown voltage. Based on the development of power amplifiers, this study describes the development history of solid-state power amplifiers, summarizes the performance comparison between GaN technology and other semiconductor technologies, and focuses on power amplifiers using GaN HEMT(GaN High Electron Mobility Transistor) technology. This study discusses various types of GaN HEMT power amplifiers, including class A, B, C, D, and E, etc., introduces the efficiency and linearity improvement techniques applied to GaN power amplifiers, including Doherty power amplifiers and envelopes tracking technology, and digital pre-distortion technology, etc., and makes a summary and comparison of related technologies.

Key words: gallium nitride, solid state power amplifiers, GaN power amplifiers, gallium nitride high electron mobility transistors, semiconductor technology, Doherty power amplifiers, envelope tracking, digital predistortion

中图分类号:

TN385

谢红星,路宏敏,刘亮,任永达,李敏,张嘉海. 氮化镓固态功率放大器发展概述[J]. 电子科技, 2023, 36(8): 65-71.

XIE Hongxing,LU Hongmin,LIU Liang,REN Yongda,LI Min,ZHANG Jiahai. Overview of Gallium Nitride Solid State Power Amplifier Development[J]. Electronic Science and Technology, 2023, 36(8): 65-71.

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性质	Si	GaAs	SiC	GaN
禁带宽度/eV	1.12	1.40	3.20	3.40
电子迁移率/cm²·Vs^-1	1 500	8 500	650	2 000
击穿电场/mv·cm^-1	0.3	0.4	3.5	3.3
饱和电子飘逸速度/cm·s^-1	1.0	1.2	2.7	2.5
特征频率/GHz	20	150	20	150
相对介电常数	11.9	12.5	10.0	9.5
热导率/W·mC^-1	150	550	450	130

技术	供电电压/V	线性度	输出功率	效率
Si BJT	26	差	中	低
Si LDMOS	26	较好	低	中
GaAspHEMT	8~12	较好	中	高
GaAs HBT	8~26	好	高	高
SiC MESFET	48	好	较高	中
GaN HEMT	48	前景好	较高	高

文献	频率 /GHz	饱和输出功率/dBm	漏极效率 /%	功率附加效率/%	峰均功率比 /dBm	调制方式	邻信道泄漏抑制比/dBc	栅极长度 /μm
[41]	1.65~2.75	44.5~46.3	46.0~62.0	-	7.5	LTE	-45.0	0.40
[42]	1.70~2.60	44.9~46.3	>45.0	-	6.5	WCDMA	-50.0	0.40
[43]	1.70~2.80	44.0~44.5	50.0~55.0	-	6.5	LTE	-47.8	0.25
[44]	1.50~2.40	43.1~44.4	45.3~53.6	-	6.7	LTE	-45.6	0.40
[45]	2.00~19.00	5.5~12.3	-	22.0~49.0	9.5	LTE	-	0.10
[46]	9.57	-	-	32.0	11.4	LTE	-33.0	0.15
[47]	1.50~3.80	43.4	63.0	-	-	LTE	-	0.40
[48]	2.35	-	46.1	40.1	11.0	LTE	-38.8	0.40

文献	EA 技术	频率 /GHz	MBW /MHz	PAPR /dB	总效率 /%	ACLR /dBc
[52]	GaN	0.90~2.15	80	6.5	32.1~35.5	-45.0
[53]	GaN	1.84	10	11.7	23.9	-38.7
[54]	CMOS	1.85	5	6.5	30.0	-32.0
[55]	CMOS	0.50~1.75	5	6.6	25.0~31.0	-47.5

	反馈	前馈	模拟预失真	数字预失真
带宽	窄	宽	较宽	中等
线性度	好	较好	好	较好
复杂度	中等	高	中等	高
效率	高	低	高	高