›› 2010, Vol. 23 ›› Issue (11): 41-43.

• 论文 • 上一篇    下一篇

一种高精度低电源电压带隙基准源的设计

刘宗福,马冬冬,赵丹辉   

  1. (中国人民解放军92785部队 技术室,河北 秦皇岛 066200)
  • 出版日期:2010-11-15 发布日期:2010-12-23
  • 作者简介:刘宗福(1984-),男,硕士,助理工程师。研究方向:VLSI设计,雷达系统。马冬冬(1983-),男,硕士,助理工程师。研究方向:通信与信息系统。

Design of a Bandgap Voltage Reference with High Accuracy and Low Power Voltage

 LIU Zong-Fu, MA Dong-Dong, ZHAO Dan-Hui   

  1. (Depertment of Technology,Unit 92785 of PLA,Qinhuangdao 066200, China)
  • Online:2010-11-15 Published:2010-12-23

摘要:

设计了一种可在低电源电压下工作,具有较高电源电压抑制比、低温度系数和低功耗的带隙基准电压源。电路基于对具有正负温度系数的两路电流加权求和的原理,对传统电路做出了改进。采用UMC 0.25  μmCMOS工艺模型,使用Hspice进行模拟,设计的基准源输出电压为900 mV,电源电压可降低到1.1 V,温度系数为8.1×10-6/℃。

关键词: 带隙基准, 温度系数, 低电源电压

Abstract:

A bandgap reference circuit with low power supply,high PSRR,low temperature coefficient and low power dissipation is designed.The bangap reference is based on the sum of two currents with both positive and negative temperature coefficients,and some improvement is made on the traditional design.The voltage reference is implemented in a UMC 0.25 μm CMOS process and simulated with Hspice.The output voltage is 900 mV,the power supply can reduce to 1.1 V,and the temperature coefficient is 8.1×10-6/℃.

Key words: bandgap reference;temperature coefficient;low power voltage

中图分类号: 

  • TN47