关键词: 单壁碳纳米管, 随机网络, 场效应晶体管, 荫罩式电子束蒸发, 底栅

Abstract:

The bottom-gate electrode is deposited on the Si substrate with electron beam evaporation method.Thin film of SiO₂ is grown on the bottom-gate electrode.The suspending liquid with single-walled carbon nanotubes (SWCNTs) which are fabricated by the commercial SWCNTs with ultra-sonic and dispersion procedures was spin-coated on the thin film of SiO₂.The drain-source electrodes were formed on the thin films of the SWCNTs by shadow mask electron beam evaporation.Too much chemistry contact with the SWCNTs is avoided by using this technology,and the properties of the SWCNTs are preserved effectively.The electricity performance of the CNT-FET device is tested at room temperature.The SWCNTs random networks thin film FETs had the advantages of steady performance,good repeatability and uniformity.This technique can be used for constructing logic circuits in CNTs,and provide valuable references for making research on large-scale and low-cost ICs based on CNTs.

Key words: SWCNTs;random networks;field effect transistor;shadow mask electron beam evaporation;bottom-gate