应变Si NMOS器件总剂量辐射对单粒子效应的影响

doi:10.16180/j.cnki.issn1007-7820.2019.06.005

Abstract

Abstract:

The effect of the total dose radiation on the single event effects of strained Si NMOS devices was investigated by using TCAD simulation. The TCAD simulation model of the 50 nm strained Si NMOS device was constructed by the experimental results comparison. The single event effect of NMOS devices under off-state (V_ds=1 V) at the total dose was simulated by the proposed correct model. The experimental results showed that the positive charge of the oxide trap introduced by the total dose radiation increased the body potential, which further exacerbated single event transients in NMOS devices. The drain transient current increased by 4.88% while the drain charge increased by 29.15% at a total dose of 2 KGy, which revealed that the effect of total dose radiation on the single event effect was mainly reflected in the significant increase in the drain charge collection.

Key words: strained Si, NMOS device, total dose radiation, single event effect, drain transient current, drain collection charge

CLC Number:

TN386

ZHANG Qian,HAO Minru. Single Event Effect Under Total Dose Radiation in Strained Si NMOS Devices[J].Electronic Science and Technology, 2019, 32(6): 22-26.

Figures/Tables 13

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References 16

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参数	数值
栅长/nm	50
沟道掺杂浓度/cm^-3	2×10¹⁸
LDD掺杂浓度/cm^-3	2×10¹⁹
源/漏掺杂浓度/cm^-3	2×10²⁰
源/漏结深/nm	25
栅介质等效厚度/nm	1
体区掺杂浓度/cm^-3	1×10¹⁷
应力/GPa	1

参数	数值
let_f/pC·μm^-1	0.02
wt_hi/μm	0.05
length/μm	10
time/s	1×10^-11
location	(0.1,0)
direction	(0,1)

TID/kGy	0.5	1	1.5	2
N_ot/cm^-2	4.12×10¹¹	6.83×10¹¹	7.81×10¹¹	8.34×10¹¹
N_it/cm^-2	1.45×10⁷	2.83×10⁷	4.53×10⁷	5.92×10⁷

Single Event Effect Under Total Dose Radiation in Strained Si NMOS Devices

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