J4

• Original Articles • Previous Articles     Next Articles

Analysis of the frequency property in SiGe HBT

ZHANG He-ming;DAI Xian-ying;Lü Yi;LIN Da-song;HU Hui-yong;WANG Wei

  

  1. (Research Inst. of Microelectronics, Xidian Univ., Xi’an 710071, China)
  • Received:1900-01-01 Revised:1900-01-01 Online:2003-06-20 Published:2003-06-20

Abstract: The main factor influencing the frequency property in SiGe HBT is the delay times during carrier transportation. Based on the analysis of the carrier transportation and distribution, the time constant models with clearly physical meanings are proposed. Themodels reveal the relationship between the time constants and the parameters of device structure and the current density in SiGe HBT. The base extending effect is also taken into account in these models. Also, the relationship between fT and the parameters of device structure and the current density is analyzed and discussed.

Key words: SiGe HBT, time constant, model, cut-off frequency

CLC Number: 

  • TN325+.3