基于衬底驱动技术的亚1V与温度成正比基准源

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A sub-１V PTAT voltage reference based on the bulk-driven technique

ZHU Zhang-ming;YANG Yin-tang

(Research Inst. of Microelectronics, Xidian Univ., Xi′an 710071， China)

Received:1900-01-01 Revised:1900-01-01 Online:2005-06-20 Published:2005-06-20

Abstract

Abstract: The fundamental principles of the bulk-driven MOSFET are discussed, with the analysis and simulation of its low voltage characteristics also made. Based on the PMOS bulk-driven and current feedback technique an sub 1V low power PTAT voltage reference is proposed. At a 0.8V power supply with 0~100℃ temperature range, the temperature coefficient of the voltage reference is 0.926mV/K, and the supply current is about 4.5μA. When the power supply ranges between 0.7~1.0V, the voltage reference is about 302mV at the room temperature.

Key words: bulk driven, PTAT, low power, CMOS

CLC Number:

TN402

ZHU Zhang-ming;YANG Yin-tang.

A sub-１V PTAT voltage reference based on the bulk-driven technique

[J].J4, 2005, 32(3): 367-369.

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A sub-１V PTAT voltage reference based on the bulk-driven technique

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