Abstract: Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN. The results show that the total hall factor increases with the temperature below 200K and decreases above 200K. The maximum hall factor obtained is 1. 22 at 200K. In addition, the polar mode optical scattering plays a dominant role in electron mobility for room temperature and above. The acoustic phonon deformation potential scattering is also important at lower temperatures.

Key words: GaN, electron drift mobility, Hall factor, Hall mobility, compensation ratio