J4 ›› 2009, Vol. 36 ›› Issue (5): 867-870+926.

• Original Articles • Previous Articles     Next Articles

Analysis and design of novel ESD protection circuit in 0.18μm CMOS process

LIU Hong-xia;LIU Qing-shan   

  1. (Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
  • Received:2008-06-23 Online:2009-10-20 Published:2009-11-30
  • Contact: LIU Hong-xia E-mail:hxliu@mail.xidian.edu.cn

Abstract:

Based on the 0.18μm CMOS process, a new type of power-rail ESD protection circuit for protecting the gate of the ESD clamp device is proposed. An NMOS feedback device is added in the detection circuit, and the dynamic transmission structure is applied. The working states are enhanced by the feedback structure, which can shutdown the protection circuit immediately, reduce the hold time of the current across the gate of the clamp device, and protect the gate. This circuit uses the normal devices for the 0.18μm CMOS process, thus saving the cost greatly. The effectiveness of this new protection circuit is verified by the research results.

Key words: electro-static discharge(ESD), protection circuits, feedback, dynamic transmission

CLC Number: 

  • TN431.1