应变Si1-xGex (100)电子散射几率

doi:10.3969/j.issn.1001-2400.2012.03.013

Abstract

Abstract:

Based on Fermi's golden rule and the theory of Boltzmann collision term approximation, scattering rates of electrons in strained Si_1-xGe_x /(100)Si is studied, including the ionized impurity, acoustic phonon, intervalley phonon and alloy disorder scattering rates. It is found that scattering rates of acoustic phonons and f₂ and f₃ intervalley phonons decrease obviously under strain. One of the two factors which lead to the electron mobility enhancement in Si-based strained materials is the electron scattering rate.

Key words: strained Si_1-xGe_x , electron, scattering

CLC Number:

TN432

ZHAO Lixia;ZHANG Heming;XUAN Rongxi;HU Huiyong. Scattering rates of electrons in strained Si_1-xGe_x (100)[J].J4, 2012, 39(3): 86-89+105.

References

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Scattering rates of electrons in strained Si_1-xGe_x (100)

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Scattering rates of electrons in strained Si_1-xGe_x (100)