Abstract: Using a SiH₄-C₃H₈-H₂ reaction gas system,polycrystal 3C-SiC films have been grown on Si(100) substrates with different porous silicon buffers via atmospheric pressure chemical vapor deposition (APCVD) process.The effect of the porosity of porous Si on the grown films quality is studied. Experimental results show that a polysilcon film with SiC(111) grains can be obtained when the porosity of porous silicon is relatively low.With the porosity increasing,the grown films change from porous SiC to poly SiC films with a preferential orientation growth along the <111> direction.

Key words: polycrystal SiC films, porous Si, APCVD, growth, characterization