[1] |
Lashkarev G, Karpyna V . ZnO-materials science from research to electronic applications[J]. Physica Status Solidi, 2015,11(10):1459-1463.
doi: 10.1002/pssc.201470061
|
[2] |
Lang J, Han Q, Yang J , et al. Fabrication and optical properties of Ce-doped ZnO nanorods[J]. Journal of Applied Physics, 2010,107(7):3270-3275.
doi: 10.1063/1.3318613
|
[3] |
Zhen Zhou, Toshitaka Komori, Tatsuya Ayukawa , et al. Li- and Er-codoped ZnO with enhanced 1.54 μm photoemission[J]. Applied Physics Letters, 2005,87(9):992-996.
doi: 10.1063/1.2035867
|
[4] |
Chang J F, Lin W C, Hon M H . Effects of post-annealing on the structure and properties of Al doped zinc oxide films[J]. Applied Surface Science, 2001,183(2):18-25.
doi: 10.1016/S0169-4332(01)00541-4
|
[5] |
Minami T, Sato H, Nanto H , et al. Group III impurity doped zinc oxide thin films prepared by RF magnetron sputtering[J]. Japanese Journal of Applied Physics, 2014,24(10):781-784.
|
[6] |
Tang W, Cameron D C . Aluminum doped zinc oxide transparent conductors deposited by the sol gel process[J]. Thin Solid Films, 1994,238(1):83-87.
doi: 10.1016/0040-6090(94)90653-X
|
[7] |
武军, 杨银堂 . K掺杂p型ZnO薄膜的制备及其表征[J]. 西安电子科技大学学报:自然科学版, 2008,35(1):92-95.
|
|
Wu Jun, Yang Yintang . Preparation and characterization of K-doped P type ZnO films[J]. Journal of Xidian University:Natural Science Edition, 2008,35(1):92-95.
|
[8] |
沈益斌, 周勋, 徐明 , 等. 过渡金属掺杂ZnO的电子结构和光学性质[J]. 物理学报, 2007,56(6):3440-3445.
doi: 10.3321/j.issn:1000-3290.2007.06.065
|
|
Shen Yibin, Zhou Xun, Xu Ming , et al. Electronic structure and optical properties of ZnO doped with transition metals[J]. Acta Physics Sinica, 2007,56(6):3440-3445.
doi: 10.3321/j.issn:1000-3290.2007.06.065
|
[9] |
Lang J, Li X, Yang J , et al. Rapid synjournal and luminescence of the Eu 3+, Er 3+,codoped ZnO quantum-dot chain via chemical precipitation method[J]. Applied Surface Science, 2011,257(22):9574-9577.
doi: 10.1016/j.apsusc.2011.06.067
|
[10] |
Bhushan S, Pandey A N, Kaza B R . Photo- and electroluminescence of undoped and rare earth doped ZnO electroluminors[J]. Journal of Luminescence, 1979,20(1):29-38.
doi: 10.1016/0022-2313(79)90020-6
|
[11] |
Kaur R, Singh A V, Mehra R M . Development of highly transparent and conducting yttrium doped ZnO films: the role of sol-gel stabilizers[J]. Materials Science-Poland, 2004,22(3):201-209.
|
[12] |
范涛健, 袁俊辉, 杨永勇 , 等. Co-Y共掺杂ZnO光电性质的第一性原理计算[J]. 无机化学学报, 2016,32(7):1183-1189.
doi: 10.11862/CJIC.2016.162
|
|
Fan Taojian, Yuan Junhui, Yang Yongyong , et al. First principle calculation of the electronic structure and optical properties of Co-Y Co-doped ZnO[J]. Chinese Journal of Inorganic Chemistry, 2016,32(7):1183-1189.
doi: 10.11862/CJIC.2016.162
|
[13] |
杨磊, 方源达, 宋丹丹 , 等. 稀土金属掺杂ZnO磁学和光学性质的第一性原理研究[ C].长沙:中国功能材料及其应用学术会议, 2010.
|
|
Yang Lei, Fang Yuanda, Song Dandan , et al. The first principle study of magnetic and optical properties of ZnO doped with rare earth metals[ C].Changsha:China National Conference on Functional Materials and Applications, 2010.
|
[14] |
李泓霖, 张仲, 吕英波 , 等. 第一性原理研究稀土掺杂ZnO结构的光电性质[J].物理学报,2013(4):264-269.
doi: 10.7498/aps.62.047101
|
|
Li Honglin, Zhang Zhong, Lv Yingbo , et al. First principles study on the electronic and opticalproperties of ZnO doped with rare earth[J].Acta Physics Sinica,2013(4):264-269.
doi: 10.7498/aps.62.047101
|
[15] |
Watanabe K, Sakairi M, Takahashi H , et al. Formation of Al-Zr composite oxide films on aluminum by sol gel coating and anodizing[J]. Journal of Electroanalytical Chemistry, 1999,473(2):250-255.
doi: 10.1016/S0022-0728(99)00121-7
|
[16] |
Zhang M, Zhang C H, Shen J . First principles calculation of electronic structure of MgxZn1-xO codoped with aluminium and nitrogen[J]. Chinese Physics B, 2011,20(1):528-533.
doi: 10.1088/1674-1056/20/1/017101
|
[17] |
Janotti A, Segev D , Walle C G V D.Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band[J]. Physical Review B Condensed Matter, 2006,74(4):45202-45209.
doi: 10.1103/PhysRevB.74.045202
|
[18] |
Jaffe J, Snyder J, Lin Z , et al. LDA and GGA calculations for high-pressure phase transitions in ZnO and MgO[J]. Physical Review B Condensed Matter, 2000,62(3):1660-1665.
doi: 10.1103/PhysRevB.62.1660
|
[19] |
刘恩科, 朱秉升, 罗晋生 . 半导体物理学[M]. 7版.北京: 电子工业出版社, 2011.
|
|
Liu Enke, Zhu Bingsheng, Luo Jinsheng. Semiconductor physics[M].Seventh Edition. Beijing: Electronic Industry Press, 2011.
|
[20] |
Lax M, Halperin B I . Impurity band tails in degenerate semiconductors[J]. International Journal of Quantum Chemistry, 2015,1(S1):767-774.
doi: 10.1002/qua.560010683
|
[21] |
Roul M K, Obasogie B, Kogo G , et al. Transparent and flexible heaters based on Al:ZnO degenerate semiconductor[J]. Journal of Applied Physics, 2017,122(13):135110-135117.
doi: 10.1063/1.4992007
|
[22] |
Jyegal J . Thermal energy diffusion incorporating generalized einstein relation for degenerate semiconductors[J]. Applied Sciences, 2017,7(8):773-778.
doi: 10.3390/app7080773
|
[23] |
牟媛, 吴振森, 张耿 , 等. 基于Kramers-Kronig关系建立金属太赫兹色散模型[J]. 物理学报, 2017,66(12):13-22.
doi: 10.7498/aps.66.120202
|
|
Mou Yuan, Wu Zhensen, Zhang Geng , et al. Establishment of THz dispersion model of metals based on Kramers-Kronig relation[J]. Acta Physics Sinica, 2017,66(12):13-22.
doi: 10.7498/aps.66.120202
|
[24] |
Madapu K K, Dhara S . Effect of strain relaxation and the burstein-moss energy shift on the optical properties of InN films grown in the self-seeded catalytic process[J]. Crystengcomm, 2016,18(17):3114-3123.
doi: 10.1039/C5CE02339D
|