电子科技 ›› 2019, Vol. 32 ›› Issue (2): 20-24.doi: 10.16180/j.cnki.issn1007-7820.2019.02.005

• • 上一篇    下一篇

稀土元素(Sm,Tm)掺杂ZnO的电学与光学性质

王岩,杨平   

  1. 江苏大学 机械工程学院,江苏 镇江 212013
  • 收稿日期:2018-02-01 出版日期:2019-02-15 发布日期:2019-01-02
  • 作者简介:王岩(1992-),男,硕士研究生。研究方向:薄膜太阳能电池。|杨平(1964-),男,博士,教授。研究方向:先进制造与可靠性等。
  • 基金资助:
    国家自然科学基金(61076098)

Electrical and Optical Properties of ZnO Doped with Rare Earth Element (Sm,Tm)

WANG Yan,YANG Ping   

  1. School of Mechanical Engineering,Jiangsu University,Zhenjiang 212013,China
  • Received:2018-02-01 Online:2019-02-15 Published:2019-01-02
  • Supported by:
    National Natural Science Foundation of China(61076098)

摘要:

运用Materials Studio软件中的CASTEP子模块,借助第一性原理平面波超软赝势法,计算分析了稀土元素(Sm,Tm)掺杂ZnO前后的能带结构、态密度以及光学性质变化情况。计算结果表明,掺杂后体系的能带部分更加稠密,出现新的杂质能级,费米能级从价带顶处上移进入导带部分,出现载流子简并现象,形成简并半导体。掺杂体系显示出更强的金属性,呈现n型导电。同时定性分析了体系前后的光学吸收系数与介电函数的变化情况。

关键词: 氧化锌, 掺杂, 第一性原理, 稀土元素, 能带, 态密度, 光学性质

Abstract:

Based on the CASTEP module in Materials Studio software, the band structure, density of states and optical properties of rare earth elements (Sm and Tm) doped ZnO were calculated and analyzed by using the first principles plane wave super soft pseudo potential method. The calculated results showed that the energy band of the doped system became thicker and denser, and the impurity energy level was presented. The Fermi energy moved upward from the top of the valence band to the conduction band. The system transformed into degenerate semiconductor, and showed stronger metallicity which prsented n type conduction. Furthermore, the changes of the absorption coefficient and the dielectric function after doping were analyzed.

Key words: ZnO, doping, first principles, rare earth elements, band structures, density of states, optical properties

中图分类号: 

  • TN304