关键词: 砷化镓, 无源元件, 电磁仿真, 等效电路模型

Abstract:

This paper presents the electromagnetic full-wave method to simulate and analyze the passive elements on GaAs substrates to derive the equivalent circuit models of the MIM capacitor,square planer inductor and Microstrip,which are used in a π matching network.All important high-frequency effects which influence the electronic characteristic of passive elements such as lossy substrates,nonuniform current distribution due to skin and proximity effects are considered in these models.Three passive elements are fabricated based on the GaAs technology and testing results show that the derived parameters of EM simulation are in excellent agreement with the measured data from 0.1 GHz to 40 GHz.The circuits simulation results using the EM models for passive elements will be closer to the actual results after tape-out than using the empirical element models.This method not only increases MMIC design accuracy,but also shortens the design time and cuts the design cost.

Key words: GaAs;passive elements;EM;equivalent circuit model