›› 2011, Vol. 24 ›› Issue (1): 59-.

• 论文 • 上一篇    下一篇



  1. (1.东南大学苏州研究院 高频高功率器件与集成技术研究中心,江苏 苏州 215123;2.东南大学 国家ASIC系统工程技术研究中心,江苏 南京 210096;3.苏州工业园区教育投资发展有限公司&苏州英诺迅科技有限公司 射频功率器件及电路技术中心,江苏 苏州 215123)
  • 出版日期:2011-01-15 发布日期:2010-12-30
  • 作者简介:薛川(1984-),男,硕士研究生。研究方向:微波单片集成电路设计,片上无源器件建模。 高怀(1961-),男,博士生导师。研究方向:高频高功率器件及单片微波集成电路设计。

A Technique of EM Modeling and Analysis of High Frequency Passive Elements

 XUE Chuan, LIANG Cong, ZHANG Xiao-Dong, HU Shan-Wen, GAO Huai   

  1. (1.High frequency & High Power Device and Integrated Technology Research Center,Research Institute of Southeast University at Suzhou,Suzhou 215123,China;2.National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;3.Joint RF Power Device & Circuit Technology Center,Suzhou SIP Education Development and Investment Co.,Ltd & Suzhou Innotion Tech Co.,Ltd,Suzhou 215123,China)
  • Online:2011-01-15 Published:2010-12-30


采用电磁场(EM)建模的分析方法,提取了砷化镓衬底上MIM电容、方形螺旋电感和微带传输线的等效电路模型,并应用于一种π形匹配网络的设计,该模型充分考虑了衬底损耗、趋肤效应、接近效应等因素,对无源元件电特性的影响,基于GaAs半导体工艺进行了流片。测试结果表明,在0.1~40 GHz频率范围内,采用EM技术提取的元件参数值有效地吻合了其测试值。采用EM等效电路模型设计的电路与传统模型设计的电路相比,更接近于流片后的实际结果,该方法不仅有效地提高了微波集成电路设计的准确度,而且缩短了设计周期、节省了设计成本。

关键词: 砷化镓, 无源元件, 电磁仿真, 等效电路模型


This paper presents the electromagnetic full-wave method to simulate and analyze the passive elements on GaAs substrates to derive the equivalent circuit models of the MIM capacitor,square planer inductor and Microstrip,which are used in a π matching network.All important high-frequency effects which influence the electronic characteristic of passive elements such as lossy substrates,nonuniform current distribution due to skin and proximity effects are considered in these models.Three passive elements are fabricated based on the GaAs technology and testing results show that the derived parameters of EM simulation are in excellent agreement with the measured data from 0.1 GHz to 40 GHz.The circuits simulation results using the EM models for passive elements will be closer to the actual results after tape-out than using the empirical element models.This method not only increases MMIC design accuracy,but also shortens the design time and cuts the design cost.

Key words: GaAs;passive elements;EM;equivalent circuit model


  • TN303