基于Atlas的MFIS结构器件电学性能模拟

›› 2011, Vol. 24 ›› Issue (6): 23-.

基于Atlas的MFIS结构器件电学性能模拟

张俊杰

(洛阳师范学院物理与电子信息学院,河南洛阳 471022)

出版日期:2011-06-15 发布日期:2011-06-14
作者简介:张俊杰(1978—),男,硕士,讲师。研究方向:铁电材料及器件。

Simulation of Electronic Properties of MFIS Structure Device with Atlas

ZHANG Junjie

(School of Physics & Electronic Information,Luoyang Normal College,Luoyang 471022,China)

Online:2011-06-15 Published:2011-06-14

摘要/Abstract

摘要：

利用Atlas器件模拟软件,对MFIS结构器件的C-V特性及记忆窗口进行模拟。讨论了应用电压、绝缘层厚度及绝缘层材料等因素,对MFIS结构器件记忆能力及稳定性的影响,为MFIS结构器件的设计和性能提高提供了参考。

关键词: MFIS;记忆窗口;C-V特性;Atlas

Abstract:

Using the device simulator Atlas,the C-V characteristic and memory of MFIS structure device are simulated.The effects of applied voltage,thickness and material of insulator layer are discussed.This work may offer guidelines to the design and performance improvement of MFIS structure devices.

Key words: MFIS;memory window;C-V characteristic;Atlas

中图分类号:

TN303

张俊杰. 基于Atlas的MFIS结构器件电学性能模拟[J]. , 2011, 24(6): 23-.

ZHANG Junjie. Simulation of Electronic Properties of MFIS Structure Device with Atlas[J]. , 2011, 24(6): 23-.