MOCVD脉冲生长对InGaN太阳能电池材料的影响

›› 2013, Vol. 26 ›› Issue (1): 10-.

MOCVD脉冲生长对InGaN太阳能电池材料的影响

贾文博,李培咸,周小伟,杨扬

(西安电子科技大学技术物理学院,陕西西安 710071)

出版日期:2013-01-15 发布日期:2013-03-08
作者简介:贾文博(1987—),男,硕士研究生。研究方向:氮化镓基材料与器件,铟镓氮太阳能电池。E-mail:jiawenbo115@sina.com

Influence of MOCVD Pulse Growth on InGaN Solar Cells Materials

JIA Wenbo,LI Peixian,ZHOU Xiaowei,YANG Yang

(School of Technical Physics,Xidian University,Xi'an 710071,China)

Online:2013-01-15 Published:2013-03-08

摘要/Abstract

摘要：

通过对InGaN三元合金的生长方式做对比,发现在相同条件下,因常规生长过程中反应室In的浓度更高,生长出的InGaN中In组分更高。但是由于预反应的原因晶体质量较差,而脉冲生长由于源的分时输运,大幅减小了预反应的发生,提高了晶体质量。但由于生长时反应室In原子浓度变小,In的组分会降低,也会减小In滴的析出。

关键词: InGaN;脉冲生长;太阳能电池;MOCVD

Abstract:

In this paper,the methods of InGaN alloy growth are compared.It is found that by conventional method the InGaN alloy tends to have a higher component because of a higher concentration of In atoms in the chamber but results in a poor crystallization quality as the pre-reaction.The one grown by pulse method tends to have a lower component of In and In drop because of a lower concentration of In atoms in the chamber but results in a good crystallization quality as the reduction of pre-reaction.

Key words: InGaN;pulse method;solar cells;MOVCD

中图分类号:

TN304.2+3

贾文博,李培咸,周小伟,杨扬. MOCVD脉冲生长对InGaN太阳能电池材料的影响[J]. , 2013, 26(1): 10-.

JIA Wenbo,LI Peixian,ZHOU Xiaowei,YANG Yang. Influence of MOCVD Pulse Growth on InGaN Solar Cells Materials[J]. , 2013, 26(1): 10-.