| ［1］许晟瑞,段焕涛,郝跃,等.r面蓝宝石生长的a面氮化镓研究［J］.西安电子科技大学学报:自然科学版,2009,36(10):1049-1052.
［2］蔡茂世.Mg掺杂AlGaN的MOCVD生长及表征［M］.西安:西安电子科技大学出版社,2011.
［3］EUNSOON O H,HYEONGSOO P,YONGJO P.Excitation density dependence of photoluminesceace in GaN:Mg［J］.Apply Physics Letter,1998,72(1):70-72.
［4］KAUFMANN U,KUNZER M,MAIER M,et al.Origin of defect-related photoluminescence bands in doped and nominally undoped GaN［J］.Apply Physics Letter,1998,72(11):1326-1333.
［5］ISHER S F,ETZEL C W,HALLER E E,et al.On p-type doping in GaN—acceptor binding energies［J］.Apply Physics Letter,1995,67(9):1298-1302.
［6］KAUFMANN U,KUNZER M,MAIER M,et al.Nature of the 2.8 eV photoluminescence band in Mg doped GaN［J］.Apply Physics Letter,1998,72(11):1326-1332.
［7］许晟瑞,周小伟,郝跃,等.在r面蓝宝石上生长的a面掺硅GaN的光学和电学性质研究［J］.中国科学:技术科学,2011,41(2):234-238.
［8］尤伟.离子注入GaN的光学和电学特性研究［D］.兰州:兰州大学,2008.
［9］XU Chengrui,HAO Yue.Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate［J］.China Physics B,2011,20(10):107-112. |
