›› 2013, Vol. 26 ›› Issue (8): 32-.

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  1. (西安电子科技大学 技术物理学院,陕西 西安 710071)
  • 出版日期:2013-08-15 发布日期:2013-09-25
  • 作者简介:张锴(1988—),男,硕士研究生。研究方向:光电材料,InGaN太阳能电池,蓝紫光LED。E-mail:zhang.kaiii@126.com

Influence of Intermediate Bandwidth Inserted Layer on the InGaN Solar Cell

ZHANG Kai,WANG Zhenxiao   

  1. (School of Technical Physics,Xidian University,Xi'an 710071,China)
  • Online:2013-08-15 Published:2013-09-25


利用wxAMPS软件对吸收层In组分为0.2的非极性InGaN基P-I-N结构双异质结太阳能电池进行仿真,分别研究了在P-I结和I-N结处插入In0.1 Ga0.9N做为中间带宽插入层对太阳能电池效率的影响。通过仿真发现,随着P-I结处插入层厚度增加,太阳能电池效率先增加后减少,而随着I-N结处插入层厚度增加,太阳能电池效率递增,但厚度超过10 nm时,增加速率迅速减小。最后再利用仿真所得的最优数据设计出同时使用两种插入层的新结构电池,共15 nm的中间带宽插入层将电池效率从10.7%提高至11.2%。

关键词: InGaN, 双异质结, 太阳能电池, 插入层


wxAMPS is used in this paper to simulate the InGaN based nonpolar P-I-N heterojunction solar cells with the Indium composition of 0.2 and the effect of inserting  In0.1 Ga0.9N to the P-I and I-N junction as a Mid-Gap interlayer respectively.We find that the efficiency of the cells first increases and then decreases with the increasing interlayer at P-I junction,and that it increases with the increasing interlayer at I-N junction but increases much slower with the thickness more than 10 nm.A new kind of P-I-N solar cell is proposed via using two interlayers at the same time and the final efficiency is improved from 10.7% to 11.2% with the total 15nm thick Mid-Gap interlayers.

Key words: InGaN;heterojunction;solar cells;interlayers


  • TM914.4