硅片表面粗糙度对界面态的影响

›› 2013, Vol. 26 ›› Issue (9): 50-.

硅片表面粗糙度对界面态的影响

陈树华,武华,周弘毅,崔文凯,马云飞,郭霞

(北京工业大学电子信息与控制工程学院,北京 100124)

出版日期:2013-09-15 发布日期:2013-09-25
作者简介:陈树华(1987—),男,硕士研究生。研究方向:硅基光电子器件。E-mail:chshh2006@126.com。郭霞(1974—),女,博士,教授,博士生导师。研究方向:光电子器件。
基金资助:
国家自然科学基金资助项目(61076048)

Influence of Silicon Surface Roughness on the Interface States

CHEN Shuhua,WU Hua,ZHOU Hongyi,CUI Wenkai,MA Yunfei,GUO Xia

(School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing 100124,China)

Online:2013-09-15 Published:2013-09-25

摘要/Abstract

摘要：

针对硅片研磨和抛光产生的亚表面损伤层会影响载流子寿命及界面态的特点,采用机械减薄、机械抛光、化学机械抛光(CMP)制备出不同粗糙度的样品。通过傅里叶红外透射谱分析和C-V 测试分析表明,粗糙度大的硅片表面因表面损伤大,具有更低的红外透射率和更高的界面态密度。

关键词: 粗糙度, 界面态, 傅里叶变换红外透射谱, C V测试

Abstract:

The sub-surface damage layer generated by grinding and polishing may effect the carrier lifetime and interface states of the silicon surface.Several samples for different roughness are fabricated by mechanical thinning,mechanical polishing and chemical mechanical polishing (CMP) processing in this paper.The Fourier transform infrared transmission spectroscopy and C-V test are used to analyze the samples.The results show that the higher the roughness of the silicon surface is,the lower the infrared transmittance and the higher density of interface states will be.

Key words: roughness;interface states;fourier transform infrared transmission spectrum;C V test

中图分类号:

TN305.2

陈树华,武华,周弘毅,崔文凯,马云飞,郭霞. 硅片表面粗糙度对界面态的影响[J]. , 2013, 26(9): 50-.

CHEN Shuhua,WU Hua,ZHOU Hongyi,CUI Wenkai,MA Yunfei,GUO Xia. Influence of Silicon Surface Roughness on the Interface States[J]. , 2013, 26(9): 50-.

参考文献

［1］ATTE H.Rotational grinding of silicon wafers-sub-surface damage inspection［J］.Materials Science and Engineering B107,2004,107(3):321-331.

［2］YU Yang.Process induced sub-surface damage in mechanically ground silicon wafers［J］.Semicond.Sci.Technolcgy,2008,23(7):1-10.
［3］KEAN C F,ANDREW B.Method of analyzing silicon groove damage using QSS-PC,PL imaging,silicon etch rate,and visual microscopy for solar cell fabrication［J］.Prog.Photovolt:Res.Applycation,2011,19(6):740-746.

［4］李改灵.亚表面损伤预测模型的仿真分析与研究［J］.军事交通学院学报,2009,11(3):92-94.

［5］Kyoung-soo Lee,Man HyoHa,Jong HwanKimn,et al.Damage-free reactive ion etch for high-efficiency large-area multi-crystalline silicon solar cells［J］.Solar Energy Materials & Solar Cells,2011,95(1):66-68.

［6］KAPILA W,TIMOTHY W,STEVE P,et al.Production ready noval texture etching process for fabrication of single crystalline silicon solar cells［C］.Honolulu,Hawaii USA:Photovoltaic Specialists Conference,2010:003635-003641.

［7］HAYOUNG P,SOONWOO K,JOON S L,et al.Improvement on surface texturing of single crystalline silicon for solar cells by saw-damage etching using an acidic solution［J］.Solar Energy Materials & Solar Cells,2009,93(10):1773-1778.

［8］肖俊锋.表面损伤对单晶硅太阳能电池制绒的影响［J］.太阳能学报,2010,31(10):1337-1342.

［9］任迪远,余学锋,陆妩,等.MOSFET电离辐射感生跨导退化的简单模型［J］.半导学报,1995,16(7):533-540.

［10］王卓,吴宇列,戴一帆,等.光学材料研磨亚表面损伤的快速检测及其影响规律［J］.光学精密工程,2008,16(1):16-21.

［11］JASON E P.Far-infrared transmission of diamond structure semiconductor single crystals-silicon and germanium［J］.Opt.Eng.,1999,38(11):1924-1931.

［12］甘荣兵,林理彬,蒋晓东,等.用透射反射扫描法检测光学薄膜的激光损伤［J］.强激光与粒子束,2002,14(1):45-48.

［13］刘恩科,朱秉升,罗晋生.半导体物理学［M］.7版.北京:电子工业出版社,2008.

［14］齐鸣,陈苹,罗晋生.用高频C-V特性测量表面势和界面陷阱密度及其分布［J］.半导体技术,1992,2(14):57-60.

［15］邵志标,何丕模.高频MOS-CV特性的界面态形变及其测量［J］.西安交通大学学报,1995,29(1):7-14.

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