［1］Heymann P.Experimental evaluation of micro-wave Field-Effect-transistor noise models［J］.IEEE Transactions on Microwave Theory and Techniques,1999,47(2):156-163.

［2］Avander Ziel.Thermal noise in field-effect transistor［J］.Proceeding of IRE,1962,50(1):1808-1812.

［3］Bruncke W W,Zvan Ziel.Thermal noise in junction gate field-effect-transistor［J］.Proceeding of IRE,1966,13(3):323-329.

［4］Pucel R A,Haus H A,Tatz H S.Signal and noise proper-ties of GaAs microwave FET［M］.New York:Academic Press In Advances in Electronics and Electron Physics,1975.

［5］Lai Y L,Hsu K H.A new pinch-off cold-FET method to determine parasitic capacitances of FET equivalent  circuits［J］.IEEE Transactons on Microwave Theory Tech,2001,49(8):1410-1418.

［6］Kjell O Jeppson.Three and four point Hamer-type MOSFET parameter extraction methods revisited［C］.New York:International Conference of Microelectronic Test Structures,1977.

［7］Hillbrand H,Russer P H.An efficient method for computer aided noise analysis of linear amplifier networks［J］.IEEE Transactions Circuits System,1976,CAS-23(4):235-238.

［8］Lee S,Yu H K,Kim C S,et al.A novel approach to extracting small-signal model perameters of silicon MOSFET's［J］.IEEE Microwave Guided Wave Letter,1977,7(1):75-77.

［9］Gao Jianjun.Scalable small-signal and noise modeling for deep-submicrometer MOSFETs［J］.
IEEE Transactions on Microwave Theory and Techniques,2009,57(4):737-744.