一种E类高效GaN HEMT功率放大器设计

›› 2016, Vol. 29 ›› Issue (2): 134-.

一种E类高效GaN HEMT功率放大器设计

严继进,蔡斐

(1.中国电子科技集团公司第38研究所微系统部,安徽合肥 230003;
2.合肥工业大学光电技术研究院,安徽合肥 230009)

出版日期:2016-02-15 发布日期:2016-02-25
作者简介:严继进(1971—),男,高级工程师。研究方向:微系统设计。蔡斐(1979—),男,助理研究员。研究方向:GaN芯片及电路设计与测试。

A design of class E Power Amplifier based on GaN HEMT

YAN Jijin,CAI Fei

(1.Micro Systems Technology,China Electronics Technology Group Corporation 28th Research Institute,Hefei 230003,China;
2.Optoelectronic Technology Research Institute,Hefei University,Hefei 230009,China)

Online:2016-02-15 Published:2016-02-25

摘要/Abstract

摘要：

功率附加效率是现代无线通信系统中一个重要的指标,较高的效率会大幅提高无线通信系统的运行时间,增强电池的续航能力,提高能源利用率,对移动通讯设备和移动安防设备而言,这几点尤为重要。文中以一款GaN HEMT功率放大器为基础,设计了一种简洁有效的E类功率放大器,用负载牵引技术和谐振器提高了器件的功率附加效率,在120～200 MHz近一个倍频程的工作频带内,实测功率附加效率均约达到74%,增益和输出功率分别约为13 dB和40 dBm。

关键词: GaN 高电子迁移率晶体管, E类功率放大器, 负载牵引, 功率附加效率

Abstract:

Power-Added Efficiency is a very important factor of mobile and wireless communication systems.High efficiency leads to long lasting connection time for mobile,nomadic and wireless devices using battery energy.Especially for public and homeland security applications,long connection time of wireless communication devices is desirable for emergency situations.This paper proposes a high efficiency class E power amplifier based on a Gallium Nitride High Electron Mobility Transistor as a power device.Load-pull technique and parallel load circuit was applied during the design process to determine the optimal load impedance for the maximum Power-Added Efficiency.Measurement results of the fabricated class E power amplifier are provided with Power-Added Efficiency (PAE) of 74% from 120 MHz to 200 MHz while power gain of and output power are about 13 dB and 40 dBm separately.

Key words: GaN HEMT;class E power amplifier;load pull;power added efficiency

中图分类号:

TN386

严继进,蔡斐. 一种E类高效GaN HEMT功率放大器设计[J]. , 2016, 29(2): 134-.

YAN Jijin,CAI Fei. A design of class E Power Amplifier based on GaN HEMT[J]. , 2016, 29(2): 134-.

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