3 A/40 V新型肖特基势垒二极管的设计与研制

›› 2016, Vol. 29 ›› Issue (3): 134-.

3 A/40 V新型肖特基势垒二极管的设计与研制

王富强,马行空,瞿宜斌

(93856部队,甘肃兰州 730070)

出版日期:2016-03-15 发布日期:2016-03-18
作者简介:王富强(1988—),男,硕士。研究方向:器件和集成电路设计。
基金资助:
国家自然科学基金资助项目(61366006);甘肃省科技支撑计划项目(1304GKCA012)

Design and Fabrication of 3 A/40 V Schottky Potential Barrier Diode

WANG Fuqiang,MA Xingkong,QU Yibin

(Troop 93856,PLA,Lanzhou 730070,China)

Online:2016-03-15 Published:2016-03-18

摘要/Abstract

摘要：

为提高传统肖特基二极管的击穿电压,减小了器件的漏电流,提高芯片利用率,文中设计研制了适合于裸片封装的新型肖特基势垒二极管(SBD)。利用Silvaco Tcad软件模拟,在器件之间采用PN结隔离,器件周围设计了离子注入形成的保护环,实现了在浓度和厚度分别为7.5×1012 cm-3和5 μm的外延层上,制作出了反向击穿电压45 V和正向导通压降0.45 V的3 A/45 V肖特基二极管,实验和仿真结果基本吻合。此外,还开发了改进SBD结构、提高其电特性的工艺流程。

关键词: 肖特基势垒, 结隔离, 保护环, 击穿电压

Abstract:

A novel Schottky potential barrier diode (SBD) suitable for die package has been successfully designed and fabricated to increase the breakdown voltage,decrease the leakage current and improve the utilization ration of chip area.The PN junction isolation is performed by simulation in Silvaco Tcad between devices surrounding which a protecting ring is designed using implantation technique.A 3 A/45 V Schottky diode with breakdown voltage of 45 V and forward voltage of 0.45 V was fabricated on 5 μm epitaxial layer doped at N-concentration of 7.5×1012 cm-3.[JP]The simulated characteristics of SBD are verified by the measurement results.The structure and technological processes for improving the performances of SBD are also presented.

Key words: Schottky potential barrier diode;junction isolation;protecting ring;breakdown voltage

中图分类号:

TN311+.8

王富强,马行空,瞿宜斌. 3 A/40 V新型肖特基势垒二极管的设计与研制[J]. , 2016, 29(3): 134-.

WANG Fuqiang,MA Xingkong,QU Yibin. Design and Fabrication of 3 A/40 V Schottky Potential Barrier Diode[J]. , 2016, 29(3): 134-.

[1]	张飞,林茂,毛鸿凯,苏芳文,隋金池. 一种具有N埋层的AlGaN/GaN高电子迁移率晶体管[J]. 电子科技, 2021, 34(5): 61-65.
[2]	苏芳文,毛鸿凯,隋金池,林茂,张飞. 一种低功耗4H-SiC IGBT的仿真研究[J]. 电子科技, 2021, 34(1): 31-36.
[3]	毛鸿凯, 苏芳文, 林茂, 张飞, 隋金池. 一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究[J]. 电子科技, 2021, 34(1): 60-64.
[4]	孙友磊,唐健翔,王颖,黄意飞,王文举. 一种阳极连接P型埋层的AlGaN/GaN肖特基二极管[J]. 电子科技, 2020, 33(1): 51-56.
[5]	苗志坤,李天琪,徐立坤. 4H-SiC TSOB结势垒肖特基二极管静态特性[J]. , 2013, 26(8): 26-.