关键词: 溶胶 凝胶法, PZT薄膜, 退火温度, 钙钛矿结构, PT种子层, 压电系数

Abstract:

Pb (Zrx,Ti1-x)O3 (PZT) and PbTiO3 (PT) thin films were fabricated on Pt/Si substrate by solgel method.The effects of annealing temperature and PT seed layer on the crystallization and piezoelectric properties of PZT thin films are studied.Xray diffraction (XRD) analysis shows that PZT thin film is of polycrystalline phase with perovskite tetragonal structure.Compared with the PZT film without PT seed layer,PZT thin films with PT seed layer show larger grain size,stronger (100) orientation,and better crystallization.AFM analysis shows that the surface of PZT film is smooth,uniform and crackfree.PFM analysis shows that the average piezoelectric coefficient d33 of PZT film with PT seed layer is 128～237 pm/V,and the average d33 of PZT film without PT seed layer is 21～29 pm/V.With increasing of annealing temperature,the grain size and surface roughness as well as the average piezoelectric coefficient of PZT films increases,and the (100) orientation with perovskite structure is preferred when the heating rate is 10 ℃/s and the soaking time is 10 min.PT seed layers can effectively improve the crystallization and piezoelectric properties of PZT thin films.

Key words: sol gel method;PZT thin films;annealing temperature;perovskite tetragonal structure;PT seed layer;piezoelectric coefficient