基于硅衬底静电感应晶体管器件仿真与研究

›› 2016, Vol. 29 ›› Issue (4): 12-.

基于硅衬底静电感应晶体管器件仿真与研究

王富强,瞿宜斌,马行空

(中国人民解放军第93856部队,甘肃兰州 730070)

出版日期:2016-04-15 发布日期:2016-04-26
作者简介:王富强(1988—),男,硕士。研究方向:器件和集成电路设计。

Research on and Simulation of Static Induction Transistor Based on Silicon Substrate

WANG Fuqiang,QU Yibin,MA Xingkong

(Troop 93856,PLA,Lanzhou 730070,China)

Online:2016-04-15 Published:2016-04-26

摘要/Abstract

摘要：

针对静电感应晶体管理论研究迟滞于实践过程,文中利用软件Silvaco Tcad,从器件仿真入手,对影响硅基表面栅静电感应晶体管器件电学性能进行了理论研究。仿真得到了反偏栅压约为0 V、漏电压＜20 V时,器件表现类五极管饱和特性曲线,器件电流约为10-5 A,此时沟道状态为预夹断。当反偏栅压为-1.5 V、漏电压逐渐增大到300 V时,器件表现为类三极管不饱和特性曲线,器件电流约为10-6 A,此时沟道状态为完全夹断,研究结果静电感应晶体管工艺实践提供了参考。

关键词: 静电感应晶体管, 沟道势垒, 器件仿真

Abstract:

The practice process of static induction transistor (SIT) stays ahead of theoretical research.A theoretical research on the electrical performance of the SIT based on Silicon by is performed from the point of device simulation using the Silvaco Tcad software.The results show that the IV performance of the device is the class pentode saturation characteristic,with a device current of about 10-5 A and prepinch off channel state at about 0 V reverse bias gate voltage and 0~20 V drain voltage.Secondly,under the condition of -1.5 V reverse bias gate voltage and 0~300 V drain voltage,the IV performance of the device shows the class triode unsaturated characteristic curve,with a device current of approximately 10-6 A and completely pinched off channel.

Key words: static induction transistor;channel barrier;device simulation

中图分类号:

TN32

王富强,瞿宜斌,马行空. 基于硅衬底静电感应晶体管器件仿真与研究[J]. , 2016, 29(4): 12-.

WANG Fuqiang,QU Yibin,MA Xingkong. Research on and Simulation of Static Induction Transistor Based on Silicon Substrate[J]. , 2016, 29(4): 12-.