关键词: 单粒子效应, 单粒子瞬态, 电荷共享, 抗辐射

Abstract:

Aiming to research the single event multiple transient due to single event charge sharing inducing by heavy-ion radiation in NMOSFET (Negative Channel Material-Oxide-Silicon Field Effect Transistor), a 65nm bulk NMOS model based on TCAD (Technology Computer-Aided Design) simulation has been built , where a SPICE model and a set of date about SET pulse width in inverter chain based on 65 nm bulk CMOS(Complementary Metal-Oxide-Semiconductor Transistor) processes are refer to. Due to charge sharing induced via injection of heavy ion, single event multiple transient was observed in the TCAD simulation. During the process of charge sharing, Observation on electrostatic potential distribution inside the device and current on the port of device reveals that source junction of the NMOS and guard ring structure play significant roles on recovery of single event multiple transient.

Key words: single event effect, single event transient, charge sharing, radiation harden