GaN能量转换器件的制作及其性能研究

doi:10.16180/j.cnki.issn1007-7820.2020.03.012

电子科技 ›› 2020, Vol. 33 ›› Issue (3): 62-65.doi: 10.16180/j.cnki.issn1007-7820.2020.03.012

GaN能量转换器件的制作及其性能研究

张达芮,王丁,王现英

上海理工大学材料科学与工程学院,上海 200093

收稿日期:2019-01-28 出版日期:2020-03-15 发布日期:2020-03-25
作者简介:张达芮(1994-),女,硕士研究生。研究方向:微纳材料与器件。
基金资助:
国家自然科学基金(51572173)

Fabrication and Properties of GaN Energy Conversion Devices

ZHANG Darui,WANG Ding,WANG Xianying

School of Material Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China

Received:2019-01-28 Online:2020-03-15 Published:2020-03-25
Supported by:
National Natural Science Foundation of China(51572173)

摘要/Abstract

摘要：

针对纳米发电机不易在较低温度下产生稳定的直流电的问题,文中把GaN纳米线阵列制作了能量转换器件。将GaN能量转换器件分别置于25~74 ℃的环境中,检测器件产生的开路电压和短路电流,并检测器件产生电信号大小与温度的关系。结果表明,通过刻蚀法制备的GaN纳米线阵列,制作成能量转换器件后,产生的电信号会随着环境温度的升高而增加,并且在约74 ℃时,可以产生高达78 mV的开路电压和0.24 nA的短路电流。

关键词: GaN纳米线阵列, PMMA, 纳米发电机, 微纳器件, 热电耦合, 能量转换

Abstract:

In this paper, an energy conversion device was made of GaN nanowire arrays for solving the problem that nanogenerators were difficult to generate stable direct current at lower temperatures. In order to detect the open circuit voltage and short circuit current generated by the device, and to detect the relationship between the electrical signal generated by the device and the temperature, the GaN energy conversion device was placed at a temperature of 25 to 74 ° C, respectively. The results showed that the GaN prepared by the etching method can be used as an energy conversion device, and the generated electrical signal increase as the ambient temperature increases. The open circuit voltage of 78 mV and short circuit current of 0.24 nA could obtained at around 74 °C.

Key words: GaN nanowire arrays, PMMA, nanogenerator, Micro-nano devices, thermoelectric coupling, energy conversion

中图分类号:

TN384

张达芮,王丁,王现英. GaN能量转换器件的制作及其性能研究[J]. 电子科技, 2020, 33(3): 62-65.

ZHANG Darui,WANG Ding,WANG Xianying. Fabrication and Properties of GaN Energy Conversion Devices[J]. Electronic Science and Technology, 2020, 33(3): 62-65.

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GaN能量转换器件的制作及其性能研究

Fabrication and Properties of GaN Energy Conversion Devices

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