具有AlGaN/GaN超晶格的GaN基LED的PL分析

›› 2015, Vol. 28 ›› Issue (2): 62-.

具有AlGaN/GaN超晶格的GaN基LED的PL分析

丁娟,王丹丹,韩孟序

(西安电子科技大学先进材料与纳米科技学院,陕西西安 710071)

出版日期:2015-02-15 发布日期:2015-02-16
作者简介:丁娟(1989—),女,硕士研究生。研究方向:宽禁带半导体,紫外LED的生长工艺及性能分析。E-mail:dingjuan1206@126.com

Photolunminescence Analysis of GaN-based Light-Emitting Diodes with an Inserted p-AlGaN/GaN Superlattice Structure

DING Juan,WANG Dandan,HAN Mengxu

(School of Advanced Material and Nanometer Technology,Xidian University,Xi'an 710071,China)

Online:2015-02-15 Published:2015-02-16

摘要/Abstract

摘要：

主要分析了具有p-ALGaN/GaN超晶格的360 nmGaN基LED的光学性能。插入的p-ALGaN/GaN超晶格结构可以看做是提高空穴注入的空穴限制层。经过PL测试发现,PL谱出现了明显的双峰以及蓝带发光,前者是由插入的超晶格引起,而蓝带荧光则是由超晶格中深能级N空位与Mg浅受主能级之前的辐射跃迁引起的。

关键词: AlGaN GaN 超晶格, LED, GaN, PL

Abstract:

This paper analyzes the performance of 360-nm GaN-based light-emitting diodes (LEDs) with an inserted p-AlGaN/GaN superlattice (SL) structure.The inserted SL can be regard as a confinement layer of holes to enhance the hole injection efficiency.Photolunminescence (PL) measurement shows the existence of double peaks and blue luminescence (BL) caused by the P-SL and deep level of N vacancy and Mg-related defect in p-AlGaN/GaN superlattice.

Key words: AlGaN/GaN superlattice;light-emitting diodes;GaN;photolunminescence

中图分类号:

TN23

丁娟,王丹丹,韩孟序. 具有AlGaN/GaN超晶格的GaN基LED的PL分析[J]. , 2015, 28(2): 62-.

DING Juan,WANG Dandan,HAN Mengxu. Photolunminescence Analysis of GaN-based Light-Emitting Diodes with an Inserted p-AlGaN/GaN Superlattice Structure[J]. , 2015, 28(2): 62-.

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