›› 2015, Vol. 28 ›› Issue (5): 111-.

• 论文 • 上一篇    下一篇

功率对制备β-FeSi2薄膜的影响

胡维前,张晋敏,邵飞,卢顺顺,贺晓金,谢泉   

  1. (贵州大学 大数据与信息工程学院,贵州 贵阳 550025)
  • 出版日期:2015-05-15 发布日期:2015-05-19
  • 通讯作者: 张晋敏(1963—),女,博士,教授。研究方向:半导体光电子材料与器件。Email:jmzhang@gzu.edu.cn
  • 作者简介:胡维前(1984—),男,硕士研究生。研究方向:β-FeSi2的光传感器制备及性质。Email:huwq2014@163.com
  • 基金资助:

    贵州省优秀教育科技人才省长基金资助项目(黔省专合字[2011]40号)

Impact of Power on the Preparation of βFeSi2 Films

HU Weiqian,ZHANG Jinmin,SHAO Fei,LU Shunshun,HE Xiaojin,XIE Quan   

  1. (Big Data and Information Engineering College,Guizhou University,Guiyang 550025,China)
  • Online:2015-05-15 Published:2015-05-19

摘要:

利用磁控溅射方法,溅射室背底真空优于2.0×10-5 Pa,采用不同的功率在Si(100)(电阻率为7~13 Ωcm)衬底上沉积一层铁薄膜(150~330 nm),然后在900 ℃,15 h背底真空条件下(4×10-4 Pa)退火,形成了β-FeSi2。采用扫描电子显微镜(SEM)对其表面形貌结构进行表征,并采用X射线衍射仪(XRD)对其进行了晶体的结构分析,当溅射功率为70~100 W时,主要衍射峰来自β-FeSi2,但同时在2θ=45°处有较大的FeSi峰,在2θ=38°附近出现较大的Fe5Si3峰。研究结果表明,制备β-FeSi2薄膜的最佳溅射功率为110 W,在900 ℃退火15 h。

关键词: 磁控溅射, &beta, -FeSi2薄膜, 晶体结构, 形貌特征

Abstract:

The magnetron sputtering method with the sputtering chamber backing vacuum better than 2.0 × 10-5 Pa,is used.A layer of Fe film(150 nm~330 nm) is deposited on the substrate of the Si(100) (electrical resistivity of 7~13 Ωcm) at different powers.Then at 900 ℃,it is annealed for 15 hours with the backing being vacuum(4 × 10-4 Pa) to form a βFeSi2.The scanning electron microscopy(SEM) is used to characterize its surface morphology structure.The Xray diffraction(XRD) is used to analyze its crystal structure.When the sputtering power is 70~100 W,the main diffraction peak is derived from βFeSi2,but at 2θ=45 °a relatively large FeSi large peak appears,and a larger Fe5Si3 peak appears in the vicinity of 2θ=38 °.The results show that the best preparation for the βFeSi2 film is annealing at 900 ℃ for 15 hours with a sputtering power of 110 W.

Key words: magnetron sputtering;βFeSi2 film;crystal structure;morphology

中图分类号: 

  • TN304