›› 2015, Vol. 28 ›› Issue (9): 172-.

• 论文 • 上一篇    下一篇

有铝激光器和无铝激光器特征温度对比研究

李雅静,彭海涛   

  1. (1.咸阳师范学院 物理与电子工程学院,陕西 咸阳 712000;
    2.中国电子科技集团公司第13研究所,河北 石家庄 050051)
  • 出版日期:2015-09-15 发布日期:2015-09-15
  • 作者简介:李雅静(1983—),女,硕士,助教。研究方向:大功率半导体激光器。E-mail:jawson-78@163.com
  • 基金资助:

    咸阳师范学院专项科研基金资助项目(12XSYK016)

Study on Characteristic Temperature of Al-containing and Al-free High Power Semiconductor Laser Diodes

LI Yajing,PENG Haitao   

  1. (1.School of Physics & Electronic Engineering,Xianyang Normal University,Xianyang 712000,China;
    2.The 13th Research Institute,CETC,Shijiazhuang 050051,China)
  • Online:2015-09-15 Published:2015-09-15

摘要:

为了测量两种有源区材料半导体激光器的温度灵敏度,文中对InGaAsP/GaAs无铝和AlGaInAs/AlGaAs/GaAs有铝的808 nm大功率半导体激光器,采用阈值电流法衡量两种有源区材料激光器的特征温度。在各种温度下实验性地测量激光器的P-I曲线,并采用线性拟合法得到阈值温度线性关系,实验结果表明有铝激光器温度性能明显优于无铝激光器。

关键词: 有铝激光器, 无铝激光器, 特征温度, 阈值电流法

Abstract:

At present,AlGaInAs and InGaAsP have been mainly used in 808 nm high-power laser diode active layer,and the semiconductor laser is very sensitive to temperature.In order to measure the temperature sensitivity of two active layer material LDs,the threshold current method are used for 808 nm high power Al-free InGaAsP/GaAs lasers and Al-containing AlGaInAs/AlGaAs/GaAs lasers to measure the characteristic temperature.We test the P-I curves at various temperatures and obtain the linear relationship between the threshold current and temperature by linear fitting.Experimental results show that the temperature properties of aluminum laser are better than those of the Al-free laser.

Key words: Al containing LD;Al free LD;characteristic temperature;threshold current method

中图分类号: 

  • TN248.4