›› 2012, Vol. 25 ›› Issue (4): 51-.

• 论文 • 上一篇    下一篇

晶体管混合π型参数与Y参数的关系

孟凡新,孙玉梅   

  1. (烟台南山大学 计算机与电气自动化学院,山东 烟台 265713)
  • 出版日期:2012-04-15 发布日期:2012-04-17
  • 作者简介:孟凡新(1963—),男,硕士,副教授。研究方向:高频电子技术。

Relationship Between Hybrid π Parameter and Y Parameter of Transistors

 MENG Fan-Xin, SUN Yu-Mei   

  1. (College of Computer and Electrical Automation,Yantai Nanshan University,Yantai 265713,China)
  • Online:2012-04-15 Published:2012-04-17

摘要:

晶体管高频小信号等效电路模型可用两种方法得到:一是把晶体管视为一个二端口网络,列出电流、电压方程式,拟定满足方程的网络模型,常采用Y参数模型;二是根据晶体管内部发生的物理过程来拟定的模型,即π型参数模型;同一个晶体管应用在不同场合可用不同的等效电路表示,同一晶体管的各种等效电路之间又应该是互相等效的,各等效电路中的参数可互相转换。

关键词: 晶体管, Y参数, &pi, 参数

Abstract:

High-frequency small-signal equivalent circuit model of the transistors can be obtained in two ways:one is that the transistor can be seen as a two-port network,thus listing current and voltage equations,and developing a network model which meets the equation,in which Y-parameter model is often used;the other is to make the model according to the physical process occurring within the transistor,namely hybrid π-type parameter model.The same transistor applied to different occasions can be represented by different equivalent circuits.It should be mutually equivalent between the various equivalent circuits of the same transistor;the parameters of all kinds of equivalent circuits should also be interchangeable.

Key words: transistor;Y- parameters;π-parameters

中图分类号: 

  • TN323+.2