关于准一维ZnSe纳米结构的合成与应用

›› 2012, Vol. 25 ›› Issue (8): 73-.

关于准一维ZnSe纳米结构的合成与应用

王志,李方泽

(合肥工业大学电子科学与应用物理学院,安徽合肥 230009)

出版日期:2012-08-15 发布日期:2012-08-28
作者简介:王志(1986—),男,硕士研究生。研究方向:电子功能材料与器件。李方泽(1986—),男,硕士研究生。研究方向:电子功能材料与器件。

Synthesis and Applications of One-dimensional ZnSe Nanostructures

WANG Zhi, LI Fang-Ze

(School of Electronic Science & Applied Physics,Hefei University of Technology,Hefei 230009,China)

Online:2012-08-15 Published:2012-08-28

摘要/Abstract

摘要：

硒化锌是Ⅱ-Ⅵ族中重要的宽禁带半导体材料,其禁带宽度为2.7 eV,是理想的蓝光探测器材料。准一维ZnSe纳米结构的合成有多种,如纳米带、纳米线、纳米棒等。由于纳米材料与薄膜材料相比具有表面积大、量子效应等独特的物理及化学特性,使得基于纳米材料的纳米器件在过去的几年内被广泛的制备与研究。目前准一维ZnSe纳米材料已经制备出多种纳米器件,文中将对ZnSe纳米结构的合成以及应用作介绍。

关键词: 硒化锌, 纳米结构, 器件

Abstract:

ZnSe as one of the most important Ⅱ-Ⅵ semiconductors has wide direct band-gap of 2.7 eV at room temperature,which is also a suitable material of Blue-light detector.One-dimensional ZnSe nanostructures are synthesized and nanodevices based on these nanostructures have been intensively studied in the past decade due to surface-to-volume rations,quantum effect and unique physical and chemical characteristics.Recently,a wide range of nanodevices based on ZnSe nanostructure have been fabricated.In this paper,the synthesis of nanostructure and the applications of nanodevice based on nanostructure are presented.

Key words: ZnSe;nanostructure;devices

中图分类号:

TN304.1+3

王志, 李方泽. 关于准一维ZnSe纳米结构的合成与应用[J]. , 2012, 25(8): 73-.

WANG Zhi, LI Fang-Ze. Synthesis and Applications of One-dimensional ZnSe Nanostructures[J]. , 2012, 25(8): 73-.

参考文献

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