GaN能量转换器件的制作及其性能研究

doi:10.16180/j.cnki.issn1007-7820.2020.03.012

Abstract

Abstract:

In this paper, an energy conversion device was made of GaN nanowire arrays for solving the problem that nanogenerators were difficult to generate stable direct current at lower temperatures. In order to detect the open circuit voltage and short circuit current generated by the device, and to detect the relationship between the electrical signal generated by the device and the temperature, the GaN energy conversion device was placed at a temperature of 25 to 74 ° C, respectively. The results showed that the GaN prepared by the etching method can be used as an energy conversion device, and the generated electrical signal increase as the ambient temperature increases. The open circuit voltage of 78 mV and short circuit current of 0.24 nA could obtained at around 74 °C.

Key words: GaN nanowire arrays, PMMA, nanogenerator, Micro-nano devices, thermoelectric coupling, energy conversion

CLC Number:

TN384

ZHANG Darui,WANG Ding,WANG Xianying. Fabrication and Properties of GaN Energy Conversion Devices[J].Electronic Science and Technology, 2020, 33(3): 62-65.

Figures/Tables 8

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Fabrication and Properties of GaN Energy Conversion Devices

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