CdZnTe晶体缺陷的交流阻抗谱研究

doi:10.16180/j.cnki.issn1007-7820.2020.11.003

Abstract

Abstract:

Tellurium cadmium zinc (CdZnTe) is a kind of II - VI wide band-gap semiconductor compound, which is a promising material to fabricate the X- or γ-ray detectors. The crystalline defects of CdZnTe has a significant influence on the detector performance, which has been paid more and more attention. In this work, CdZnTe crystalline wafer is grown by vertical Bridgman method, and XRD measurement shows that the wafer is (111) oriented. The impedance characteristics of crystal defects are studied by measuring the AC impedance spectra of the samples at different temperatures. The results show that the prepared CdZnTe single crystal exhibits a negative temperature coefficient effect, and Ohmic contact has been formed between the Au electrode prepared by chemical method and the wafer. The effect of electrode interface and grain boundary is not observed, and the mechanism of grain conduction is dominant. The fitted activation energy of the defect is about 0.48 eV determined by fitting the Arrhenius equation, indicating that Cd vacancy is the main crystal defect.

Key words: CdZnTe, crystal defect, activation energy, AC impedance spectroscopy

CLC Number:

TN304.2

MU Hao,XIE Jinghui,LIU Yucong,WANG Ding,SHEN Yue,WANG Linjun. Investigation on the Crystal Defects of CdZnTe by AC Impedance Spectrum[J].Electronic Science and Technology, 2020, 33(11): 11-15.

Figures/Tables 6

Figure 1.

Figure 2.

Figure 3.

Figure 4.

Table 1

Figure 5.

References 18

[1]	丁洪林, 张秀风. 化合物半导体探测器的发展、现状及其应用[C]. 南昌:中国电子学会第七届全国核电子学与核探测技术学术年会, 1994.
	Ding Honglin, Zhang Xiufeng. Development, present situation and application of compound semiconductor detector[C]. Nanchang:China Electronics Society,The Seventh National Annual Conference of Nuclear Electronics and Nuclear Detection Technology, 1994.
[2]	Glazov V M, Chizhevskais S N. Investigation of physico-chemical properties of zinc telluride cadmium telluride melts[J]. Doklady Akademii Nauk Sssr, 1964,154(1):193-210.
[3]	Tomashik V N, Oleinik G S, Mizetska Y I. System CdTe-ZnS[J]. Inoranic Materials, 1978,14(10):1428-30.
[4]	Grigorov G M, Ruvinski M A. Negative intrinsic and impurity photoconductivity of ZnTe-CdTe crystals[J]. Soviet Physics Semiconductors-Ussr, 1970,4(2):290-304.
[5]	Halsted R E, Segall B. Double acceptor fluorescence in II-VI compounds[J]. Physical Review Letters, 1963,10(9):392-402.
[6]	Kot M V, Tsurkan A E. Recombination radiation in P-N junctions of crystals of CdTe-ZnTe system[J]. Soviet Physics Solid State, 1966,7(9):2304-2311.
[7]	Segall B. Optical absorption edge in CdTe-Theoretical[J]. Physical Review, 1966,150(2):734-746.
[8]	Li X, Chu J H, Li L X, et al. Development of room temperature CdZnTe nuclear radiation detector[J]. Semiconductor Technology, 2008(11):941-946.
[9]	于晖, 介万奇, 查钢强, 等. CdZnTe平面核辐射探测器研究[J]. 人工晶体学报, 2009,38(3):620-624.
	Yu Hui, Jie Wanqi, Zha Gangqiang, et al. Research on CdZnTe planar detector[J]. Journal of Synthetic Crystals, 2009,38(3):620-624.
[10]	王东, 闵嘉华, 梁小燕, 等. 溶液法制备CdZnTe晶体中Te夹杂相分析[J]. 上海大学学报(自然科学版), 2013,19(1):67-70.
	Wang Dong, Min Jiahua, Liang Xiaoyan, et al. Analysis of Te inclusions in CdZnTe crystal growth from solution[J]. Journal of Shanghai University(Natural Science), 2013,19(1):67-70.
[11]	Menendez P E, Casanova P M, Orellana W, et al. Symmetry and thermodynamics of tellurium vacancies in cadmium telluride[J]. Physica B:Physics of Condensed Matter, 2019,568(1):81-87.
[12]	Kauppinen H, Baroux L, Saarinen K, et al. Identification of cadmium vacancy complexes in CdTe(In), CdTe(Cl) and CdTe(I) by positron annihilation with core electrons[J]. Journal of Physics:Condensed Matter, 1997(6):5495-5505.
[13]	Emanuelsson P, Omling P. Identification of the cadmium vacancy in CdTe by electron paramagnetic resonance[J]. Physical Review B, 1993,47(23):564-578.
[14]	Csaba S. Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors[J]. IEEE Transactions on Nuclear Science, 2004,51(3):633-639.
[15]	Feng T, Zha G Q, Yang J, et al. XAFS and XRD studies of the Cd₁-_xZn_xTe crystal fine structure[J]. Journal of Physics:Conference Series, 2013,43(9):988-996.
[16]	程晋荣, 石贵阳, 祁玉发, 等. BiFeO-3-PbTiO-3系高温压电陶瓷的阻抗谱分析[J]. 上海大学学报(自然科学版), 2011,17(4):535-540.
	Cheng Jinrong, Shi Guiyang, Qi Yufa, et al. Impedance spectroscopy study of high temperature BiFeO₃-PbTiO₃ based ceramics[J]. Journal of Shanghai University(Natural Science), 2011,17(1):535-540.
[17]	Li Q, Li H B, Fan H Q, et al. Electrical conduction behavior and hopping rates estimate of cadmium zinc telluride single crystal[J]. Journal of Crystal Growth, 2013,372(6):175-179.
[18]	Kjonscher A. Dielectric relaxation in solids[J]. Journal of Physics D: Applied Physics, 1999,32(5):R57-R70.

温度/ K	σ(0)/ S·m^-1	m	lnA
303	1.03E-6	1.12	-22.97
333	2.54E-6	1.04	-21.38
363	8.87E-6	0.98	-20.94
393	3.69E-5	0.96	-20.31
423	1.11E-4	0.95	-20.27
453	1.61E-4	0.84	-19.63
483	7.31E-4	0.77	-18.56

Investigation on the Crystal Defects of CdZnTe by AC Impedance Spectrum

RichHTML

PDF (PC)

Like

Knowledge

Abstract

Cite this article

share this article

Figures/Tables 6

References 18

Related Articles 7

Metrics

Comments

Recommended 10

[1]	ZANG Daojun,LI Yunxiang,XU Shuai,WANG Yan. DFT Study on Gas Sensing Property of MoS₂ Monolayer [J]. Electronic Science and Technology, 2019, 32(1): 5-10.
[2]	HUANG Yong,LI Peixian,BAI Junchun,WANG Xiaobo. Effect of the Multi-quantum Barrier Electron Blocking Layer on the Efficiency of UV LED [J]. , 2014, 27(6): 184-.
[3]	JIA Wenbo,LI Peixian,ZHOU Xiaowei,YANG Yang. Influence of MOCVD Pulse Growth on InGaN Solar Cells Materials [J]. , 2013, 26(1): 10-.
[4]	WANG Peng. Analysis of Factors Influencing Si-C Film Making [J]. , 2012, 25(8): 82-.
[5]	CAI Jia-Jun, JIANG Peng. Synthesis and Applications of Quasi One-Dimensional (1D) Cds Nanostructures [J]. , 2011, 24(7): 144-.
[6]	LIU Yi, ZHAO Guang-Cai, LI Pei-Xian. Simulation and Optimization of Current Distribution in GaN-based LEDs [J]. , 2010, 23(8): 43-.
[7]	WANG Yang, LEI Tian-Min, ZHANG Zhi. Characteristics of SiCOI MESFET [J]. , 2010, 23(6): 19-.