Abstract:

Use is made of SIMS (secondary ion mass spectrometry) to test the trace amount of phosphorus in heavy arsenic doping silicon wafers.Pretreatment of the samples and precise control of the equipment significantly shorten the testing time and limit the phosphorus detection to as low a degree as 5×10¹³  cm^-3.Experiments show that the pretreatment of samples have great effect on the results of the test.Surface roughness differs with each other when pretreatment ways vary.And the surface roughness will directly affect the testing time and accuracy.At the same time,by equipment adjustment,the vacuum reaches 1×10^-10  torr,thus greatly decreasing the background noise of sample test and detection limit.

Key words: SIMS;heavy arsenic doping silicon;phosphorus impurity;pretreatment of sample