氮化镓固态功率放大器发展概述

doi:10.16180/j.cnki.issn1007-7820.2023.08.010

Abstract

Abstract:

Solid-state power amplifiers using semiconductor technology have the advantages of small size and high stability, and have replaced traditional travelling wave tube amplifiers in many microwave applications. Among all types of semiconductor materials, the third-generation semiconductor material GaN(Gallium Nitride) has been widely used in power amplifiers because of its advantages of wide band gap, high electron mobility, and high breakdown voltage. Based on the development of power amplifiers, this study describes the development history of solid-state power amplifiers, summarizes the performance comparison between GaN technology and other semiconductor technologies, and focuses on power amplifiers using GaN HEMT(GaN High Electron Mobility Transistor) technology. This study discusses various types of GaN HEMT power amplifiers, including class A, B, C, D, and E, etc., introduces the efficiency and linearity improvement techniques applied to GaN power amplifiers, including Doherty power amplifiers and envelopes tracking technology, and digital pre-distortion technology, etc., and makes a summary and comparison of related technologies.

Key words: gallium nitride, solid state power amplifiers, GaN power amplifiers, gallium nitride high electron mobility transistors, semiconductor technology, Doherty power amplifiers, envelope tracking, digital predistortion

CLC Number:

TN385

XIE Hongxing,LU Hongmin,LIU Liang,REN Yongda,LI Min,ZHANG Jiahai. Overview of Gallium Nitride Solid State Power Amplifier Development[J].Electronic Science and Technology, 2023, 36(8): 65-71.

Figures/Tables 10

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References 64

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性质	Si	GaAs	SiC	GaN
禁带宽度/eV	1.12	1.40	3.20	3.40
电子迁移率/cm²·Vs^-1	1 500	8 500	650	2 000
击穿电场/mv·cm^-1	0.3	0.4	3.5	3.3
饱和电子飘逸速度/cm·s^-1	1.0	1.2	2.7	2.5
特征频率/GHz	20	150	20	150
相对介电常数	11.9	12.5	10.0	9.5
热导率/W·mC^-1	150	550	450	130

技术	供电电压/V	线性度	输出功率	效率
Si BJT	26	差	中	低
Si LDMOS	26	较好	低	中
GaAspHEMT	8~12	较好	中	高
GaAs HBT	8~26	好	高	高
SiC MESFET	48	好	较高	中
GaN HEMT	48	前景好	较高	高

文献	频率 /GHz	饱和输出功率/dBm	漏极效率 /%	功率附加效率/%	峰均功率比 /dBm	调制方式	邻信道泄漏抑制比/dBc	栅极长度 /μm
[41]	1.65~2.75	44.5~46.3	46.0~62.0	-	7.5	LTE	-45.0	0.40
[42]	1.70~2.60	44.9~46.3	>45.0	-	6.5	WCDMA	-50.0	0.40
[43]	1.70~2.80	44.0~44.5	50.0~55.0	-	6.5	LTE	-47.8	0.25
[44]	1.50~2.40	43.1~44.4	45.3~53.6	-	6.7	LTE	-45.6	0.40
[45]	2.00~19.00	5.5~12.3	-	22.0~49.0	9.5	LTE	-	0.10
[46]	9.57	-	-	32.0	11.4	LTE	-33.0	0.15
[47]	1.50~3.80	43.4	63.0	-	-	LTE	-	0.40
[48]	2.35	-	46.1	40.1	11.0	LTE	-38.8	0.40

文献	EA 技术	频率 /GHz	MBW /MHz	PAPR /dB	总效率 /%	ACLR /dBc
[52]	GaN	0.90~2.15	80	6.5	32.1~35.5	-45.0
[53]	GaN	1.84	10	11.7	23.9	-38.7
[54]	CMOS	1.85	5	6.5	30.0	-32.0
[55]	CMOS	0.50~1.75	5	6.6	25.0~31.0	-47.5

	反馈	前馈	模拟预失真	数字预失真
带宽	窄	宽	较宽	中等
线性度	好	较好	好	较好
复杂度	中等	高	中等	高
效率	高	低	高	高

Overview of Gallium Nitride Solid State Power Amplifier Development

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