表面Ge沟道pMOSFET阈值电压模型

doi:10.3969/j.issn.1001-2400.2012.04.017

Abstract

Abstract:

An analytical model of the threshold voltage of the Ge channel pMOSFET is developed by solving Poisson's equation for the first time. The short channel effect(SCE) and drain induced barrier lower(DIBL) are in corporated into the model. Simulated results show satisfactory agreement with experimental data. Simulated results also show that the channel length, Ge content, substrate doping concentration, and gate oxide thickness affect the threshold voltage greatly. Simulation results show that, when the channel length is less than 200nm, the SCE and DIBL affect to threshold voltage greatly, and when the channel length is more than 500nm, the effect of the SCE and DIBL on the threshold voltage can be ignored.

Key words: threshold voltage, Ge channel pMOSFET, DIBL, SCE

DAI Xianying;LI Zhi;ZHANG Heming;HAO Yue;WANG Lin;ZHA Dong;WANG Xiaochen;FU Yich. Threshold voltage model of the surface Ge channel pMOSFET[J].J4, 2012, 39(4): 94-97+113.

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Threshold voltage model of the surface Ge channel pMOSFET

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