氮钝化对SiC MOS电容栅介质可靠性的影响

doi:10.19665/j.issn1001-2400.2022.03.023

Abstract

Abstract:

Nitric oxide annealing is currently the mainstream interface passivation process in industry,and the passivation effect is severely affected by the annealing conditions of the nitric oxide,so it is important to select appropriate annealing conditions to improve the interface quality.In this paper,the influences of different nitric oxide passivation time on the traps near gate oxide interface and the reliability of gate dielectrics are investigated by the use of n-type and p-type SiC MOS capacitors.The interface traps,near-interface traps,oxide traps and the reliability of gate dielectrics are characterized by the parallel conductance peak test,capacitance-voltage hysteresis test,gate bias stress test and gate leakage test,respectively.The results show that increasing the nitric oxide annealing time can reduce the interface electron trap density of the n-type MOS capacitor and improve the interface quality.In addition,increasing the nitric oxide annealing time can reduce the near-interface electron traps that affect the positive shift of the threshold voltage,but at the same time it will introduce excess hole traps,which can improve the threshold voltage positive stability and worsen the threshold voltage negative stability.Similarly,increasing the nitric oxide annealing time will reduce the effective fixed charge density that is negatively charged in the oxide layer,but will increase the effective fixed charge density that is positively charged in the oxide layer.The results of gate leakage characteristics show that the nitric oxide annealed time has different effects on the gate oxide reliability during the on-state and off-state operation of the device.The results in this paper provide a useful annealing process reference for improving the performance of SiC MOSFETs.

Key words: silicon carbide, MOS capacitors, interface states, annealing, gate dielectrics

CLC Number:

TN386

BAI Zhiqiang,ZHANG Yimeng,TANG Xiaoyan,SONG Qingwen,ZHANG Yuming,DAI Xiaoping,GAO Xiuxiu,QI Fang. The effect of nitrogen passivation on gate dielectric reliability of SiC MOS capacitors[J].Journal of Xidian University, 2022, 49(3): 206-212.

Figures/Tables 9

References 16

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样品编号	类型	退火工艺
样品编号	类型	温度/℃	NO退火时间/m	N₂退火时间/m
1#	n	1 250	30	90
2#	n	1 250	60	60
3#	n	1 250	90	30
4#	p	1 250	30	90
5#	p	1 250	60	60
6#	p	1 250	90	30

样品	类型 NO退火时间/m	NMOS			PMOS
样品	类型 NO退火时间/m	90	60	30	90	60	30
V_fb-c/V		-0.91	-0.75	-0.66	-4.65	-4.02	-3.88
V_fb-l/V			-1.90			1.00
ΔV_fb-c-l/V		0.99	1.15	1.24	-5.66	-5.03	-4.88

The effect of nitrogen passivation on gate dielectric reliability of SiC MOS capacitors

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