基于准一维CdS纳米结构的合成及应用

›› 2011, Vol. 24 ›› Issue (7): 144-.

基于准一维CdS纳米结构的合成及应用

蔡家骏,江鹏

(合肥工业大学电子科学与应用物理学院,安徽合肥 230009)

出版日期:2011-07-15 发布日期:2011-08-16
作者简介:蔡家骏(1985—),男,硕士研究生。研究方向:电子功能材料与传感器。江鹏(1987—),男,硕士研究生。研究方向:电子功能材料与传感器。

Synthesis and Applications of Quasi One-Dimensional (1D) Cds Nanostructures

CAI Jia-Jun, JIANG Peng

(School of Electronic Science & Applied Physics,Hefei University of Technology,Hefei 230009,China)

Online:2011-07-15 Published:2011-08-16

摘要/Abstract

摘要：

针对准一维硫化镉(CdS)纳米结构的合成及其器件作了相应介绍。硫化镉(CdS)作为一种II-VI族半导体材料,室温禁带宽度为2.42 eV,合成方法多种多样,可根据具体的需求和条件,通过对各种具体参数的调节,合成出需要的CdS纳米结构及高质量的准一维CdS纳米结构制备出高性能器件。虽然准一维CdS纳米结构的合成和器件制备还处在实验阶段,但其独特的光电化学性能,已被广泛应用于光化学电池和储能器件。

关键词: 硫化镉, 纳米结构, 器件合成

Abstract:

This paper discusses quasi one-dimensional cadmium sulfide (CdS) nanostructures synthesis and corresponding devices.Cadmium sulfide (CdS) as a II-VI semiconductor material with band gap at room temperature is 2.42 eV,has a variety of synthesis methods,according to the specific needs and conditions,by adjusting specific parameters of synthesis needs CdS nanostructures and high-quality quasi-one-dimensional CdS nanostructures prepared by high-performance devices.Although the quasi one-dimensional CdS nanostructures synthesis and device fabrication is still in the laboratory stage,their unique optical and chemical properties have been widely used in photochemical battery and energy storage devices.

Key words: CdS;nanostructures;synthesis;device

中图分类号:

TN304.2+5

蔡家骏, 江鹏. 基于准一维CdS纳米结构的合成及应用[J]. , 2011, 24(7): 144-.

CAI Jia-Jun, JIANG Peng. Synthesis and Applications of Quasi One-Dimensional (1D) Cds Nanostructures[J]. , 2011, 24(7): 144-.

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