基于ICP的硅高深宽比沟槽刻蚀技术

›› 2012, Vol. 25 ›› Issue (8): 77-.

基于ICP的硅高深宽比沟槽刻蚀技术

展明浩,宋同晶,皇华,王文婧,陈博

(1.合肥工业大学电子科学与应用物理学院,安徽合肥 230009;2.中国兵器工业第214所工艺1部,安徽蚌埠 233042)

出版日期:2012-08-15 发布日期:2012-08-28
作者简介:展明浩(1966—),男,研究员。研究方向:MEMS传感器。宋同晶(1988—),男,硕士研究生。研究方向:ICP刻蚀技术。

Study of High Aspect Ratio Silicon Trench Etching Based on ICP

ZHAN Ming-Hao, SONG Tong-Jing, HUANG Hua, WANG Wen-Jing, CHEN Bo

(1.School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230009,China;
2.First Department of Techniques,No.214 Institute of Chinese Ordnance Industry,Bengbu 233042,China)

Online:2012-08-15 Published:2012-08-28

摘要/Abstract

摘要：

介绍了电感耦合等离子体(ICP)刻蚀技术的基本概念。结合英国STS公司的STS multiplex ICP system刻蚀机,介绍了刻蚀机原理及刻蚀过程。对硅深槽刻蚀技术进行了分析,对其中Footing效应、Lag效应和侧壁光滑问题提出了优化方案,最后在实验的基础上得出了能够刻蚀出高质量硅深沟槽的刻蚀参数。

关键词: ICP刻蚀, Footing效应, Lag效应, 侧壁光滑度, 高深宽比

Abstract:

This paper introduces the basic concepts of the inductively coupled plasma (ICP) etching technique.On the basis of the STS multiplex ICP system etching machine,it describes the principle of the etching machine and the etching process.The silicon deep trench etching technology is analyzed.An optimization scheme is presented for such problems as footing effect,lag effect and sidewalls roughness.With lots of experiments,we have obtained the etching conditions for etching high aspect ratio silicon deep trench.

Key words: ICP etching;Footing effect;Lag effect;sidewall roughness;high aspect ratio

中图分类号:

TN305.7

展明浩, 宋同晶, 皇华, 王文婧, 陈博. 基于ICP的硅高深宽比沟槽刻蚀技术[J]. , 2012, 25(8): 77-.

ZHAN Ming-Hao, SONG Tong-Jing, HUANG Hua, WANG Wen-Jing, CHEN Bo. Study of High Aspect Ratio Silicon Trench Etching Based on ICP[J]. , 2012, 25(8): 77-.