碳化硅薄膜制备影响因素分析

摘要/Abstract

摘要：

碳化硅薄膜因其具有一系列优异的特性,被视为制作电子元件的重要材料,性能好、用途广。高质量SiC薄膜的生长,不仅有利于解决自补偿问题,而且有利于解决薄膜中存在应力和杂质等问题,对SiC薄膜的应用,特别是在微电子器件上的应用尤为关键。因此如何制作高质量的碳化硅薄膜是亟待解决的问题。为此,文中从大量试验中,找出了其主要影响因素;从衬底负偏压、工作温度和衬底温度、工作介质、射频功率、工作气压、沉积时间、Gr几个方面进行分析,得出了制备碳化硅薄膜的影响规律。

关键词: 碳化硅薄膜, 制备, 影响因素

Abstract:

Silicon carbide (SiC) is viewed as one of the most promising and the most commercioganic semiconductors and widely utilized in optoelectronic devices.Growth of high quality silicon carbide (SiC) film,which have advantages in effectively solving perplexed problems existing in the film such as the self-compensation,intrinsic stress and impurity,plays a critical role in the application of SiC film,especially the application of microelectronic devices.Hence,the growth of high quality silicon carbide (SiC) film becomes the problem which needs to be solved immediately.For this reason,a lot of experiments have been done to find the contributing factor.This paper analyzes the factors influencing Si-C Film Making from the follow aspects:negative substrate bias,working and substrate temperature,working substance,RF power,operation gas pressure,Gr and the time of deposition.Then the growth rules of making SiC film is found.

Key words: SiC film;preparation;interfering factor

中图分类号:

TN304.2+5

王彭. 碳化硅薄膜制备影响因素分析[J]. , 2012, 25(8): 82-.

WANG Peng. Analysis of Factors Influencing Si-C Film Making[J]. , 2012, 25(8): 82-.

参考文献

［1］WAHAB Q,HULTMAN L,IVANOV I P,et al.3C-SiC/Si/3C-SiC Epitaxial tri-layer films deposited on Si(111) substrates by reactive magnetron sputtering［J］.J.Mater.Res,1995,10(6):1349-1351.

［2］SHIN-ICHIM M,SHIGEO K.Carbonization process for low-temperature growth of 3C-SiC by the gas-source molecular-beam epitaxial method［J］.J.Appl Phys,1989,54(3):242-243.

［3］SHIMADA J,KATAYAMA Y.Compositional and structural properties of amorphous SixC1-x:H alloys prepared by reactive sputtering［J］.J.Appl Phys,1979,50(8):5530-5532.

［4］KIMUR T,YUGO S,KOMATSUBARA K F.Characteristics of the synthesis of β-SiC by the implantation of carbon ions into silicon［J］.Thin Solid Films,1982,94(6):191

［5］郑治祥.化学气相沉积碳化硅薄膜的研究［J］.硅酸盐学报,1995,23(5):550-554.

［6］ALEXANDER A,PAVEL V.Deposition and optical properties of amorphous hydrogenated SixCy layers［J］.Mater.Sci.and Eng,1995,B29(1-3):151-153.

［7］欧阳世翕,程吉平.微波等离子体CVD法制备β-SiC薄膜［J］.功能材料,1992,23(4):217-220.

［8］SUN Z,SUN Y,WANG X.Epitaxially grown β-SiC on Si in the CH4+H2 system by hot filament chemical vapour deposition［J］.Mater.Sci.and Eng,1995,B34(4):13-16.

［9］POWERS J M,PDELPLANLKE M.Preparation of SixCyHz films from methylsilane by plasma-enhanced chemical vapor deposition［J］.Thin Solid Films,1991,22(2):289-298.

［10］CHEN Tao,HUANG Yuelong,WANG Haiyan,et al.Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells［J］.Thin Solid Films,2009,517(3):3513-3515.

［11］WASA K,TAKAO T,YUKIO K,et al.Highly-reliable temperature sensor using rf-sputtered SiC thin film［J］.Rev.Sci.Instrum,1979,50(9):1084-1088.

［12］汤海鹏,王英华.溅射SiC薄膜的XPS分析［J］.材料科学进展,1989,31(3):245-248.

［13］SEMENOV A V,PUZIKOV V M,DOBROTVORSKAYA M V,et al.Nanocrystalline SiC films prepared by direct deposition of carbon and silicon ions［J］.Thin Solid Films,2008,51(6):2899-2903.

［14］WANG Z P,YOUSEFI H R,NISHINO Y,et al.Preparation of silicon carbide film by a plasma focus device”［J］.Physics Letters A,2008,372(48):7179-7182.

［15］LIU Zhongliang,REN Peng,LIU Jinfeng,et al.Effect of different Ge predeposition amounts on SiC grown on Si(111)［J］.Applied Surface Science,2009,255(11):5698-5701.

［16］STONER B R,MAG H.Characterization of bias-enhanced nucleation of diamond on silicon by invacuo surface analysis and transmission electron microscopy［J］.Physical Review,1992,B45(19):11067-11084.

［17］LELY J A.Darstellung von einkristallen von silicium carbid und beherrschung von art und menge der eingebauten verunreinigungen［C］.Berichte der Deutschen Keramischen Gesellschaft,1955,32:229-236.

［18］WANG Y,WEN J,TANG Y,et al.The preparation of single-crystal 4H-SiC film by pulsed XeCl laser deposition［J］.Thin Solid Film,1999,26(1):93.

[1]	章奇,李忠文,于治水. 光纤激光器制备FeNiMoCoCrTi高熵合金过程与研究综述[J]. 电子科技, 2021, 34(7): 67-72.
[2]	王家涛,魏镜弢,钱杰,吴张永,王庭有. 机械剪切剥离法制备石墨烯研究进展[J]. 电子科技, 2020, 33(12): 44-48.
[3]	周强,梁蓓,邹四凤,何元英. 热电材料的研究进展[J]. , 2015, 28(5): 172-.
[4]	黄登勇. 超级电容器氧化锰电极材料的特点制备[J]. , 2014, 27(12): 90-.