石墨烯/NiAu复合透明导电层在GaN LED的应用

›› 2014, Vol. 27 ›› Issue (2): 109-.

石墨烯/NiAu复合透明导电层在GaN LED的应用

郑雷,徐晨,孙捷,许坤,陈茂兴,葛海亮

(北京工业大学光电子技术实验室,北京 100124)

出版日期:2014-02-15 发布日期:2014-01-12
作者简介:郑雷(1989—),男,硕士研究生。研究方向:石墨烯在LED方面的应用。E-mail:xuchen58@bjut.edu.cn。徐晨(1958—),男,博士学历,教授。研究方向:半导体器件和材料。
基金资助:
国家自然科学基金资助项目(61076044,61204011);高等学校博士学科点专项科研基金资助项目:博导类(20121103110018);北京市自然科学基金资助项目(4132006,4102003,4112006)

Graphene/NiAu Sheets as Transparent Conductive Layer Used in GaN LED

ZHENG Lei, XU Chen, SUN Jie, XU Kun, CHEN Mao-Xin, GE Hai-Liang

(Key Laboratory of Optoelectronics Technology of Ministry of Education,Beijing University of Technology,Beijing 100124,China)

Online:2014-02-15 Published:2014-01-12

摘要/Abstract

摘要：

通过溅射方法制备Ni/Au层,用作石墨烯和p型GaN之间的插入层来减小接触电势。研究了Ni和Au的厚度比与GaN LED性能的关系。结果表明,在1.5 nm总厚度的条件下,Ni与Au厚度比为1 nm/0.5 nm时为最佳,可同时兼顾透光性能和良好欧姆接触,此时,石墨烯/NiAu复合透明导电层可以明显地降低GaN LED的工作电压,同时在蓝光波段具有很高的透光率,因而提高了GaN LED的发光性能。

关键词: 石墨烯, Ni/Au, 透明导电层, GaN LED

Abstract:

A Ni / Au layer prepared by sputtering method is used as insertion between the graphene and the P-type GaN layer to reduce the contact potential.We study the relationship of the thickness ratio of Ni and Au with GaN LED performance.The results show that under the conditions of 1.5 nm total thickness with the light transmission properties and good ohmic contact in consideration,a Ni and Au thickness ratio of 1 nm/0.5 nm is the best,in which case the Graphene / NiAu composite transparent conductive layer can significantly reduce the operating voltage of the GaN LED with a high light transmittance in the blue band,thereby improving the light emitting properties of the GaN LED.

Key words: graphene;Ni/Au;transparent conductive layer;GaN LED

中图分类号:

TN304

郑雷, 徐晨, 孙捷, 许坤, 陈茂兴, 葛海亮. 石墨烯/NiAu复合透明导电层在GaN LED的应用[J]. , 2014, 27(2): 109-.

ZHENG Lei, XU Chen, SUN Jie, XU Kun, CHEN Mao-Xin, GE Hai-Liang. Graphene/NiAu Sheets as Transparent Conductive Layer Used in GaN LED[J]. , 2014, 27(2): 109-.

参考文献

［1］NOVOSELOV K S,GEIM A K,MOROZOV S V,et.al.Electric field effect in atomically thin carbon films［J］.Science,2004,306(5696):666-669.

［2］NAIR R R,BLAKE P,GRIGORENKO A N,et al.Fine structure constant defines visual transparency of graphene［J］.Science,2008,320(5881):1308-1308.

［3］SERVICE R F.Carbon sheets an atom thick give rise to graphene dreams［J］.Science,2009,324(5932):875-877.

［4］BONACCORSO F,HASAN T,FERRARI A C.Graphene photonics and optoelectronics［J］.Nat.Photonics,2010,4(9):611-622.

［5］GUO Song,DU Xiaogang,LIU Xiaoyun,et al.Graphene oxide as doping material for assembling oleds via thermal co-evaporation with NPB and Alp3［J］.Chin.J.Lumin.,2013,34(5):595-599.

［6］NOVOSELOV K S,JIANG Z,ZHANG Y,et al.Room-temperature quantum hall effect in graphene［J］.Science,2007,315(5817):1379-1379.

［7］KIM K S,ZHAO Y,JANG H,et al.Large-scale pattern growth of graphene films for stretchable transparent electrodes［J］.Nature,2009,457(7230):706-710.

［8］XU Kun,XU Chen,DENG Jun,et al.Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes［J］.Electrochimica,209(55):491-497.

［9］GUNHO J,MINHYEOK C,CHUYOUNG C,et al.Large scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes［J］.Nanotechnology,2010,175201(21):1-6.

［10］WU J B,AGRAWAL M,BECERRIL H A,et al.Organic light-emitting diodes on solution-processed graphene transparent electrodes［J］.ACS Nano,2010,4(1):43-48.

［11］JUNGMIN L,HAE Y JEONG,KYOUNG J C,et al.Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes［J］.Appl.phys.Lett,2011,041115
(99):041115-1-3.

［12］SUN J,LINDVALL,NICLAS,et al.Low partial pressure chemical vapor deposition of graphene on copper［J］.IEEE Transactions on Nanotechnology,2012,11(2):255-260

［13］WANG W R,ZHOU Y X,LI T,et al.Research on synthesis of high quality and large-scale graphene films by chemical vapon desposition［J］.Acta Phys.Sin,2012,61(3):038702.

［14］PARK S,RUOFF R S.Chemical methods for the production of graphenes［J］.Nature Nanotechnol,2009,4(4):217-224.

［15］ISHIKAWA H,KOBAYASHI S S,KOIDE Y,et al.Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces［J］J.Appl.Phys,1997,81(3):1315-1322.

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