›› 2014, Vol. 27 ›› Issue (2): 68-.

• 论文 • 上一篇    下一篇

背照式CCD图像传感器减薄技术研究

邓刚,韩恒利,钟四成   

  1. (重庆光电技术研究所 硅工艺中心,重庆 400060)
  • 出版日期:2014-02-15 发布日期:2014-01-12
  • 作者简介:邓刚(1970—),高级工。研究方向:CCD图像传感器背面减薄工艺。E-mail:2829755@163.com

Backside-illuminated Charge-coupled Devices (CCDS) Thinning Technology

 DENG Gang, HAN Heng-Li, ZHONG Si-Cheng   

  1. (Silicon Technology Center,Chongqing Optoelectronics Research Institute,Chongqing 400060,China)
  • Online:2014-02-15 Published:2014-01-12

摘要:

提出了一种研磨减薄和化学腐蚀结合的方法,减薄CCD衬底。研磨减薄采用三氧化二铝的颗粒,减薄硅片至100 μm,化学腐蚀采用HF酸、硝酸、冰乙酸组成的混合溶液。实验表明,HF酸、硝酸、冰乙酸比例为2:1:11时,混合溶液对衬底与外延层的腐蚀速率比达到89:1。使用本技术减薄1 024×512可见光CCD,实现了背照式成像。

关键词: 背照, CCD, 减薄, 成像

Abstract:

Backside-illuminated charge-coupled devices (CCDs) need backside thinning.A novel chemical after mechanical thinning technique is proposed.Aluminium oxide abrasive is used for grinding thinning to reduce the thickness to 100μm,and solution mixed by HF acid,nitric acid and ice acetic acid for chemical corrosion.Experiments show that a ratio of 2:1:11 of HF acid,nitric acid and ice acetic acid achieves a substrate to epitaxial layer corrosion rate of 89:1.This technique is used to thin the 1 024×512 visible light CCD,which realizes backside-illuminated imaging.

Key words: backside-illuminated;charge-couple device;thinning

中图分类号: 

  • TN304