(11-02)r面蓝宝石生长的(112-0)a面氮化镓研究

Abstract

Abstract:

The spontaneous and piezoelectric polarizatio represent one of the unsolved problems in utilizing GaN for fabricating light-emitting devices. To solve the problem, non-polar GaN structures have been studied. Low-temperature AlN buffers are used for (112-0) a-plane GaN growth on the (11-02) r-plane sapphire. A combination of atomic force microscopy (AFM), high resolution X-ray diffraction (XRD) and photoluminescence (PL) spectrum is used to characterize dislocation of the (112-0) a-plane and (0001) c-plane GaN epilayer. Compared with the typical hexagonal dislocation of c-plane GaN, this shows great difference with the conventional polar GaN, and the pit of the a-plane GaN epilayer is triangle, with the possible formation mechanisms of these faults discussed and the triangular pit directions also investigated.

Key words: dislocation, GaN, X-ray diffraction, nonpolar

CLC Number:

TN325

XU Sheng-rui;DUAN Huan-tao;HAO Yue;ZHANG Jin-cheng;ZHANG Jin-feng;NI Jin-yu;HU S. Study of (112-0) non polar a-plane GaN on the (11-02) r-plane sapphire[J].J4, 2009, 36(6): 1049-1052+1058.

References

［1］张进城, 郝跃, 王冲, 等. 基于蓝宝石衬底的高性能AlGaN/GaN二维电子气材料与HEMT器件［J］. 半导体学报，2004, 25(10): 1281-1284.
Zhang Jincheng, Hao Yue, Wang Chong, et al. Super AlGaN/GaN Two-dimensional Electron Gas Materials and HEMT Devices on Sapphire Substrates［J］. Chinese Journal of Semiconductors, 2004, 25(10): 1281-1284.
［2］Shen L, Keller S, Chakraborty A, et al. Nitride-based High Electron Mobility Transistors with a GaN Spacer［J］. Applied Physics Lerrers, 2006, 89(17): 073508-1-073508-3.
［3］张金凤, 郝跃. AlGaN/GaN中二维电子气研究新进展［J］. 西安电子科技大学学报, 2003, 30(3): 326-330.
Zhang Jinfeng, Hao Yue. AlGaN/GaN Two-dimensional Gas: a Critical Review［J］. Journal of Xidian University, 2003, 30(3): 326-330.
［4］Ju W T, Daniel A, Gu L, et al. Epitaxial Lateral Overgrowth of Gallium Nitride on Silicon Substrate［J］. Journal of Crystal Growth, 2004, 263(4): 30-34.
［5］颜建锋, 张洁, 郭丽伟, 等. r面蓝宝石衬底上采用两步AIN缓冲层法外延生长a面GaN薄膜及应力研究［J］. 半导体学报, 2007, 28(10): 1562-1567.
Yan Jianfeng, Zhang Jie, Guo Lili, et al. Growth and Stress Analysis of a-plane GaN Films Grown on r-plane Sapphire Substrate with Two-step AlN Buffer Layer［J］. Journal of Semiconductors, 2007, 28(10): 1562-1567.
［6］Theeradetch D. Green Light Emitting Diodes on a-plane GaN Bulk Substrates［J］. Applied Physics Letters, 2008, 92(24): 241109-1-241109-3.
［7］Roder C, Einfeldt S, Figge S. Stress and Wafer Bending of a-plane GaN Layers on r-plane Sapphire Substrates ［J］. Journal of Applied Physics, 2006,100(10): 103511-1-103511-2.
［8］Wu Feng, Craven M D, Lim S H, et al. Speck Polarity Determination of a-plane GaN on r-plane Sapphire and Its Effects on Lateral Overgrowth and Heteroepitaxy［J］. Journal of Applied Physics, 2003, 94(2): 942-947.
［9］Ni X, Fu Y, Morkoc H B. Optimization of ［11-20］ a-plane GaN Growth by MOCVD on ［1-102］ r-plane Sapphire［J］. Journal of Crystal Growth, 2006, 290(1): 166-170.
［10］Ko T S, Wang T C, Gao R C. Study on Optimal Growth Conditions of a-plane GaN Grown on r-plane Sapphire by Metal-organic Chemical Vapor Deposition［J］. Journal of Crystal Growth, 2007, 300(2): 308-313.
［11］Craven M D, Lim S H, Wu F. Threading Dislocation Reduction Via Laterally Overgrown Nonpolar (11-20) a-plane GaN［J］. Applied Physics Letters, 2002, 81(7): 1201-1203.
［12］Jurènas S, Kuoktis E, Miasojedovas S, et al. Increase of Free Carrier Lifetime in Nonpolar a-plane GaN Grown by Epitaxial Lateral Overgrowth［J］. Applied Physics Letters, 2004, 85(5): 771-773.
［13］Imer B, Wu F, S J, et al. Growth Evolution in Sidewall Lateral Epitaxial Overgrowth (SLEO)［J］. Journal of Crystal Growth, 2007, 306(2): 330-338.
［14］Vennegues P, Beaumont B, Bousquet V, et al. Reduction Mechanisms for Defect Densities in GaN Using One-or Two-step Epitaxial Lateral Overgrowth Methods ［J］. Journal of Applied Physics, 2000, 87(9): 4175-4181.
［15］Reshchikov M A. Strong Suppression of the Yellow Luminescence in C-doped GaN in Air Ambient ［J］. Applied Physics Letters, 2006, 89(23): 232106-1-232106-3.
［16］zgür , Ni X, Fu Y. Near-field Scanning Optical Microscopy and Time-resolved Optical Characterization of Epitaxial Lateral Overgrown c-plane and a-plane GaN ［J］. Applied Physics Letters, 2006, 89(26): 262117-1-262117-3.
［17］Reshchikov A, Morko H. Luminescence Properties of Defects in GaN［J］. Journal of Applied Physics, 2005, 97(6): 061301-1-061301-95.

[1]	SI Chengxiang,GAO Feng,ZHU Liehuang,GONG Guopeng,ZHANG Can,CHEN Zhuo,LI Ruiguang. Covert data transmission mechanism based on dynamic label in blockchain [J]. Journal of Xidian University, 2020, 47(5): 94-102.
[2]	GE Qin,XU Bo,TAO Hongqi,WANG Weibo,MA Xiaohua,GUO Fangjin,LIU Yu. W-band 3.4 W/mm GaN power amplifier MMIC [J]. Journal of Xidian University, 2020, 47(1): 24-29.
[3]	GUO Jichang,HE Yanhong,WEI Huiwen. Image steganalysis based on the modularized residual network [J]. Journal of Xidian University, 2019, 46(1): 79-85.
[4]	GAO Jiaming;LIANG Yu;ZHANG Wei;LIU Yanyan. Memory efficient architecture for 2-D DWT [J]. Journal of Xidian University, 2018, 45(2): 110-115.
[5]	FENG Lansheng;GUO Runqiu;ZHANG Jincheng. Effect of reactor geometry on GaN in a vertical MOCVD reactor [J]. Journal of Xidian University, 2017, 44(1): 171-175.
[6]	FENG Lansheng;GUO Runqiu;ZHANG Jincheng. Effect of growth parameters on GaN in a vertical MOCVD reactor [J]. Journal of Xidian University, 2016, 43(5): 178-182.
[7]	FENG Lansheng;GUO Runqiu;ZHANG Jincheng. Kinetic Monte Carlo simulation of GaN epitaxy [J]. Journal of Xidian University, 2016, 43(3): 167-171.
[8]	ZHANG Minqing;ZHANG Yan;LI Delong;LUO Peng. Blind steganalysis algorithm based new calibration for JPEG images [J]. J4, 2015, 42(5): 133-138.
[9]	XIA Bingbing;ZHAO Xianfeng;ZHANG Hong. Assorted benchmarking for steganography based on blind steganalyzer accuracy fitting [J]. J4, 2015, 42(4): 153-158.
[10]	NIU Ke;LI Jun;LIU Jia;YANG Xiaoyuan. Strategic adaptive steganography based on the game theory model [J]. J4, 2015, 42(4): 165-170.
[11]	LIU Jiajia;LEI Tianmin;ZHANG Yuming;CHEN Delin;GUO Hui;ZHANG Zhiyong. Effect ofthe manganese doping concentration and site on the magnetism of graphene [J]. J4, 2015, 42(4): 76-80+106.
[12]	PENG Yali;LIU Fang. Organizational evolutionary algorithm for occlusion recovery [J]. J4, 2013, 40(4): 137-141.
[13]	LIU Hongxia;LU Fengming;WANG Yonghuai;SONG Dajian;WU Yi. Multiple sub-bands analytical model of 2DEG properties in the Al_xGa_1-xN/GaN heterostructure [J]. J4, 2011, 38(5): 147-151.
[14]	CHEN Chi;HAO Yue;FENG Hui;MA Xiao-hua;ZHANG Jin-cheng;HU Shi-gang. X-band single stage GaN solid-state power amplifier [J]. J4, 2009, 36(6): 1039-1043.
[15]	WANG An-min. Design of the manufacturing organization system for multi-lifecycles [J]. J4, 2007, 34(3): 476-480.

Study of (112-0) non polar a-plane GaN on the (11-02) r-plane sapphire

PDF (PC)

Like

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 15

Metrics

Comments

Recommended 9