一种具有低寿命区的阳极短路4H-SiC IGBT仿真研究

doi:10.16180/j.cnki.issn1007-7820.2021.01.011

Abstract

Abstract:

The traditional trench type 4H-SiC IGBT has a large turn-off loss, and it is difficult to compromise the turn-on voltage drop and turn-off loss. Aiming at this problem, a LS-IGBT structure was proposed, in which the emitter region contained a low-life region while a stepped collector was introduced by collector region to reduce the turn-off loss of the device. This method reduced the turn-off loss of a device by simultaneously controlling the number of hole carriers injected in the collector region and the lifetime of the P base region carriers, while maintaining the device breakdown voltage. The Silvaco Atlas device simulation tool was used to simulate the improved structure and compare it with the traditional structure. The simulation results showed that under the premise of consistent breakdown voltage, the turn-off loss of the new structure was increased by 84.5 % compared with the conventional structure, and the turn-on voltage drop of the device was reduced by 8.3%, which verified the correctness of the design.

Key words: breakdown voltage, turn-off loss, 4H-SiC, IGBT, on-state voltage, Silvaco Atlas

CLC Number:

TN312+.3

MAO Hongkai, SU Fangwen, LIN Mao, ZHANG Fei, SUI Jinchi. Simulation Study of Anode Short Circuit 4H-SiC IGBT with Low Lifetime Region[J].Electronic Science and Technology, 2021, 34(1): 60-64.

Figures/Tables 8

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References 19

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参数	参数值
半元胞宽度	2.1 μm
N^-漂移区厚度	160 μm
栅极宽度	0.6 μm
栅极厚度	5 μm
P⁺源区宽度	1 μm
P⁺源区厚度	0.25 μm
P⁺源区掺杂浓度	5×10¹⁹ cm^-3
N⁺源区掺杂浓度	2×10¹⁹ cm^-3
P^-基区厚度	1 μm
P^-基区掺杂浓度	4×10¹⁷ cm^-3
P⁺屏蔽层掺杂浓度	5×10¹⁸ cm^-3
N^-漂移区掺杂浓度	4.5×10¹⁴ cm^-3
N缓冲层厚度	2 μm
N缓冲层掺杂浓度	1×10¹⁷ cm^-3
P⁺集电区掺杂浓度	1×10¹⁹ cm^-3

参数	数值	含义
E_g₃₀₀/eV	3.24	300 K时材料的禁带宽度
E_g_alpha/eV·K^-1	4.15×10^-4	禁带宽度模型的参数
E_g_beta/eV·K^-1	-131	禁带宽度模型的参数
Permittivity	9.7	相对介电常数
Affinity	4.2	电子亲和能
AUGN/cm⁶·s^-1	5×10^-32	电子的俄歇复合系数
AUGP/cm⁶·s^-1	2×10^-32	空穴的俄歇复合系数
E_ab/eV	0.2	受主能级
E_db/eV	0.1	施主能级
G_vb/eV	4	价带简并因子
G_cb/eV	2	导带简并因子
LT.TAUN	5	电子的载流子寿命模型参数
LT.TAUP	5	空穴的载流子寿命模型参数
N_srhn/cm^-3	3×10^-17	电子的肖特基复合模型参数
N_srhp/cm^-3	3×10^-17	空穴的肖特基复合模型参数
ARICHN/A·(K^-2·cm^-2)^-1 A	110	电子的有效理查德森常数
AARICHP/A·(K^-2·cm^-2)^-1A	30	空穴的有效理查德森常数

Simulation Study of Anode Short Circuit 4H-SiC IGBT with Low Lifetime Region

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