一种低功耗4H-SiC IGBT的仿真研究

doi:10.16180/j.cnki.issn1007-7820.2021.01.006

Abstract

Abstract:

In this paper, a new trench gate 4H-SiC IGBT structure is designed and simulated by Silvaco TCAD for the problem that the traditional trench gate 4H-SiC IGBT has long turn-off time and high turn-off energy loss. By improving the structure of the conventional trench gate 4H-SiC IGBT, two sets of high doping P and N layers are introduced in the N ⁺ buffer layer to increase the donor concentration of the N ⁺ buffer layer, which compromises the forward voltage drop of the device and turn off the energy loss. The PN junction in the reverse bias state in the N ⁺ buffer layer optimizes the electric field distribution in the N ^-drift region when the device is in the turn-off process, which accelerates the electron extraction in the N ^-drift region and shortenes the turn-off time of the device. This ultimately reduces the turn-off energy loss of the device and increases the breakdown voltage of the device. Silvaco TCAD simulation results show that the new trench gate 4H-SiC IGBT has a breakdown voltage of 16 kV. Compared with the conventional structure with a breakdown voltage of 15 kV, the turn-off energy loss is as low as 4.63 mJ, which is 40.41% lower than the conventional structure.

Key words: 4H-SiC, IGBT, breakdown voltage, turn-off energy loss, forward voltage drop, Silvaco TCAD

CLC Number:

TN312+.3

SU Fangwen,MAO Hongkai,SUI Jinchi,LIN Mao,ZHANG Fei. Simulation Study of a Low Power 4H-SiC IGBT[J].Electronic Science and Technology, 2021, 34(1): 31-36.

Figures/Tables 9

Figure 1.

Table 1

Table 2

Figure 2.

Figure 3.

Figure 4.

Figure 5.

Figure 6.

Figure 7.

References 20

[1]	Chowdhury S, Hitchcock.C W, Stum Z, et al. Operating principles, design considerations, and experimental characteristics of high-voltage 4H-SiC bidirectional IGBTs[J]. IEEE Transactions on Electron Devices, 2017,64(3):888-896. doi: 10.1109/TED.2016.2631241
[2]	Fukuda K, Okamoto D, Okamoto M, et al. Development of ultrahigh-voltage SiC devices[J]. IEEE Transactions on Electron Devices, 2014,62(2):396-404. doi: 10.1109/TED.2014.2357812
[3]	Palmour J W, Cheng L, Pala V, et al. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV[C]. Waikoloa: IEEE the Twenty-sixth International Symposium on Power Semiconductor Devices aand IC's, 2014.
[4]	Sui Y, Wang X, Cooper J A. High-voltage self-aligned p-channel DMOS-IGBTs in 4H-SiC[J]. IEEE Electron Device Letters, 2007,28(8):728-730. doi: 10.1109/LED.2007.901582
[5]	Kaji N, Niwa H, Suda J, et al. Ultrahigh-voltage SiC pin diodes with improved forward characteristics[J]. IEEE Transactions on Electron Devices, 2014,62(2):374-381. doi: 10.1109/TED.2014.2352279
[6]	Chowdhury S, Hitchcock C, Stum Z, et al. 4H-SiC n-channel insulated gate bipolar transistors on (0001) and (000-1) oriented free-standing n-substrates[J]. IEEE Electron Device Letters, 2016,37(3):317-320. doi: 10.1109/LED.2016.2521164
[7]	Brunt E V, Cheng L, O'Loughlin M J, et al. 27 kV, 20 A 4H-SiC n-IGBTs[J]. Materials Science Forum Transactions Technology Publications, 2015,82(1):847-850.
[8]	Deguchi T, Mizushima T, Fujisawa H. Static and dynamic performance evaluation of >13 kV SiC p-channel IGBTs at high temperatures[C]. Waikoloa:IEEE the Twenty-sixth International Symposium on Power Semiconductor Devices & IC's, 2014.
[9]	Chowdhury S, Chow T P. Performance tradeoffs for ultra-high voltage (15 kV to 25 kV) 4H-SiC n-channel and p-channel IGBTs[C]. Prague:The Twenty-eighth International Symposium on Power Semiconductor Devices and ICs, 2016.
[10]	Lee M C, Wang G, Huang A Q. 4H-SiC 15kV N-TIGBT physics-based sub-circuit model implemented in Simulink/MATLAB[C]. Charlotte:IEEE Applied Power Electronics Conference and Exposition, 2015.
[11]	Ryu S H, Capell C, Cheng L. High performance, ultra high voltage 4H-SiC IGBTs[C]. Raleigh:IEEE Energy Conversion Congress and Exposition, 2012.
[12]	Ryu S H, Capell C, Jonas C, et al. An analysis of forward conduction characteristics of ultrahigh voltage 4H-SiC PTC-TIGBTs[J]. Materials Science Forum Transactions Technology Publications, 2016,85(8):945-948.
[13]	Zhang Q, Wang J, Jonas C, et al. Design and characterization of high-voltage 4H-SiC p-IGBTs[J]. IEEE Transactions on Electron Devices, 2008,55(8):1912-1919. doi: 10.1109/TED.16
[14]	Tan B, Tian X L, Lu J, et al. Design and optimization of four-region multistep field limiting rings for 10 kV 4H-SiC IGBTs[C]. Qingdao:The Fourteenth IEEE International Conference on Solid-State and Integrated Circuit Technology, 2018.
[15]	Tongtong Y, Song B, Runhua H. Simulation and optimization of field limiting rings for ultrahigh voltage 4H-SiC IGBT[C]. Beijing:The Thirteenth China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, 2016.
[16]	王彭. 碳化硅薄膜制备影响因素分析[J]. 电子科技, 2012,25(8):82-85.
	Wang Peng. Analysis of factors influencing Si-C film making[J]. Electronic Science and Technology, 2012,25(8):82-85.
[17]	许龙来, 钟志亲. 4H-SiC 材料干法刻蚀工艺的研究[J]. 电子科技, 2019,32(2):1-3.
	Xu Longlai, Zhong Zhiqin. Study of dry etching in 4H-SiC Material[J]. Electronic Science and Technology, 2019,32(2):1-3.
[18]	霍昌隆, 刘斯扬, 钱钦松. SOI-LIGBT 器件正偏安全工作区的研究[J]. 电子科技, 2012,25(7):106-109.
	Huo Changlong, Liu Siyang, Qian Qinsong. Research on forward bias safe operating area of SOI-LIGBT[J]. Electronic Science and Technology, 2012,25(7):106-109.
[19]	Sung W, Wang J, Huang A Q, et al. Design and investigation of frequency capability of 15kV 4H-SiC IGBT[C]. Barcelona:The Twenty-first International Symposium on Power Semiconductor Devices & IC's, 2009.
[20]	Tamaki T, Walden G G, Sui Y, et al. Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs[J]. IEEE Transactions on Electron Devices, 2008,55(8):1928-1933.

参数	C-TIGBT	N-TIGBT
P⁺浓度/cm^-3	5×10¹⁹	5×10¹⁹
N⁺浓度/cm^-3	2×10¹⁹	2×10¹⁹
P^-体区浓度/cm^-3	4×10¹⁷	4×10¹⁷
CSL层浓度/cm^-3	1×10¹⁵	1×10¹⁵
P⁺屏蔽层浓度/cm^-3	5×10¹⁸	5×10¹⁸
N^-漂移区浓度/cm^-3	4.5×10¹⁴	4.5×10¹⁴
N⁺缓冲层浓度/cm^-3	1×10¹⁷	1×10¹⁷
P⁺集电极浓度厚度/μm	1	1
半元胞宽度/μm	2.1	2.1
栅极宽度/μm	0.6	0.6
栅极深度/μm	5	5
N^-漂移区厚度/μm	160	160
P区浓度/cm^-3	-	6×10¹⁷
N区浓度/cm^-3	-	6×10¹⁷

参数	参数值	单位
mu1n.caug	40	cm²·Vs^-1
mu2n.caug	950	cm²·Vs^-1
ncritn.caug	2×10¹⁷	cm^-3
deltan.caug	0.73	arbitrary
gamman.caug	-0.76	arbitrary
alphan.caug	0	arbitrary
betan.caug	-2.4	arbitrary
mu1p.caug	53.3	cm²·Vs^-1
mu2p.caug	105.4	cm²·Vs^-1
ncritp.caug	2.2×10¹⁸	cm^-3
deltap.caug	0.7	arbitrary
gammap.caug	0	arbitrary
alphap.caug	0	arbitrary
betap.caug	-2.1	arbitrary
vsatn	2×10⁷	cm²·Vs^-1
vsatp	2×10⁷	cm²·Vs^-1
betan	2	-
betap	1	-

Simulation Study of a Low Power 4H-SiC IGBT

RichHTML

PDF (PC)

Like

Knowledge

Abstract

Cite this article

share this article

Figures/Tables 9

References 20

Related Articles 5

Metrics

Comments

Recommended 0

[1]	ZHANG Fei,LIN Mao,MAO Hongkai,SU Fangwen,SUI Jinchi. An AlGaN/GaN High-Electron Mobility Transistor with N-Buried Layer [J]. Electronic Science and Technology, 2021, 34(5): 61-65.
[2]	MAO Hongkai, SU Fangwen, LIN Mao, ZHANG Fei, SUI Jinchi. Simulation Study of Anode Short Circuit 4H-SiC IGBT with Low Lifetime Region [J]. Electronic Science and Technology, 2021, 34(1): 60-64.
[3]	WANG Fuqiang,MA Xingkong,QU Yibin. Design and Fabrication of 3 A/40 V Schottky Potential Barrier Diode [J]. , 2016, 29(3): 134-.
[4]	MIAO Zhikun,LI Tianqi,XU Likun. Study on the Static Characteristics of 4H-SiC TSOB Junction Barrier Schottky Rectifiers [J]. , 2013, 26(8): 26-.
[5]	WANG Qiu-Yan, LIU Yan, LI Shu-Yan. Design of Compact Full Bridge DC-DC Isolated Power [J]. , 2011, 24(9): 30-.